2SC4256 ,NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4257 ,NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC4260 , isc Silicon NPN RF Transistor
2SC4260 , isc Silicon NPN RF Transistor
2SC4260 , isc Silicon NPN RF Transistor
2SC4261 , isc Silicon NPN RF Transistor
2SK2855 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APP ..
2SK2855 ,FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION2SK2855 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2855 UHF BAND AMPLIFIER APP ..
2SK2856 ,N CHANNEL SINGLE GATE MODULATION DOPE TYPE (UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)APPLICATIONS Unit in mm11.1.n1O T.nw Nnign Fianna . NF:0 7dR (F21 EGT-T'z) c1:1rsA11u- n - ‘v-~vEre ..
2SK2857 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES 0.42 0.42±0.06±0.060.47• Can be driven by a 5V power source.1.5 ±0.06 +0.030.41-0.05• Lo ..
2SK2858 ,N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHINGFEATURES31• Can be driven by a 2.5-V power source• Low gate cut-off voltageMarkingORDERING INFORMAT ..
2SK2859 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC4256
