2SC4207 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier ApplicationsApplications Unit: mm Small package (dual type) High voltage and high current: V = 50 V, I ..
2SC4208 ,Small-signal deviceAbsolute Maximum Ratings T = 25°C+0.15a+0.2 0.45–0.10.45–0.1Parameter Symbol Rating Unit(1.27) (1. ..
2SC4210 ,Transistor Silicon NPN Epitaxial Type (PCT process) Audio Power Amplifier ApplicationsApplications Unit: mm High DC current gain: h = 100~320 FE Complementary to 2SA1621 Maximum ..
2SC4213 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC4213A , For Muting and Switching Applications
2SC4213-A , For Muting and Switching Applications
2SK2717 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 2.78 ..
2SK2718 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) DC .DC Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 3.125 ..
2SK2723 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES• Low On-ResistanceRDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A)RDS (on) 2 = 60mΩ Max. ( ..
2SK2724 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEDATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SK2724SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL ..
2SK2726 , Silicon N Channel MOS FET High Speed Power Switching
2SK2730 , Silicon N Channel MOS FET High Speed Power Switching
2SC4207
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
2SC4207 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4207 Audio Frequency General Purpose Amplifier Applications Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~700 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1618
Maximum Ratings (Ta ��� � 25°C) (Q1, Q2 common)
Note 1: Total rating
Marking Equivalent Circuit (top view) Unit: mm
Weight: 0.014 g (typ.)
