2SC4177 ,AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
——Iml
—_—
_m-
_mm
_—-
__—
VCB=60V,IE=0
VEB = 5. ..
2SC4177 ,AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORFEATURES
PACKAGE DIMENSIONS
in millimeters
O Complementary to 2SA1611
0 High DC Current G ..
2SC4177-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
——Iml
—_—
_m-
_mm
_—-
__—
VCB=60V,IE=0
VEB = 5. ..
2SC4178 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 ''tp
CHARACTERISTIC SYMBOL MIN. TYP, MAX. UNIT _ TEST CONDIT ..
2SC4178-T1 ,Silicon transistorFEATURES
0 Micro package.
. High gain bandwidth product. fr = 600 MHz TYP. (IE = --1.0 mA)
. ..
2SC4179 ,FM/AM RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTORFEATURES
'" ”"2"??? _ ' 0 High Gain Baniwidthvroduct.. f-r = 250 MHz TYP.
. l . 0 Low Output Ca ..
2SK2654-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2654-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2655 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2655 ,N-channel MOS-FETFeatures > Outline Drawing------ VGS -Repetitive Avalanche Rated>
2SK2655-01R ,N-channel MOS-FET2SK2655-01RFAP-IIS Series 900V 2Ω 100W>
2SK2661 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Chopper Regulator, DC朌C Converter and Motor Drive ApplicationsThermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R 1.67 ..
2SC4177
