2SC4176-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 °c)
CHARACTERISTIC f svMBoC" MIN. TYP. --T- MAX. UNIT TEST CONDI ..
2SC4176-T2 ,Silicon transistorPACKAGE DIMENSIONS
in millimeters
2.1i0.1
v
0.9i0.1
0.3
1. Emitter
2. Base
B. Colle ..
2SC4177 ,AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
——Iml
—_—
_m-
_mm
_—-
__—
VCB=60V,IE=0
VEB = 5. ..
2SC4177 ,AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORFEATURES
PACKAGE DIMENSIONS
in millimeters
O Complementary to 2SA1611
0 High DC Current G ..
2SC4177-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
——Iml
—_—
_m-
_mm
_—-
__—
VCB=60V,IE=0
VEB = 5. ..
2SC4178 ,HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 ''tp
CHARACTERISTIC SYMBOL MIN. TYP, MAX. UNIT _ TEST CONDIT ..
2SK2653-01R ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2654 ,N-channel MOS-FETFeatures > Outline Drawing-------Repetitive Avalanche Rated>
2SK2654-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2654-01 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2655 ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2655 ,N-channel MOS-FETFeatures > Outline Drawing------ VGS -Repetitive Avalanche Rated>
2SC4176-T1-2SC4176-T2
