2SC3919 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3922 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3928 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type)
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SK2123. ,Silicon N-Channel Power F-MOS FETPower F-MOS FETs2SK2123Silicon N-Channel Power F-MOS FETn
2SK2123.. ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C 2.54±0.25.08±0.4Parameter Symbol Ratings Unit1 237 Drain to So ..
2SK2124 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C 2.54±0.25.08±0.4Parameter Symbol Ratings Unit1 237 Drain to So ..
2SK2125 ,Silicon N-Channel Power F-MOS FETApplicationsl Contactless relayl Diving circuit for a solenoidl Driving circuit for a motor2.6±0.11 ..
2SK2126 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C5.08±0.4Parameter Symbol Ratings Unit1 237 Drain to Source brea ..
2SK2128 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C5.08±0.4Parameter Symbol Ratings Unit1 237 Drain to Source brea ..
2SC3919
