2SC3915 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3916 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3919 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3922 ,NPN Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance)Absolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3928 , For Low Frequency Amplify Application Sillcon Npn Epitaxial Type (Mini type)
2SC3928A , FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SK212 ,N-Channel Junction Silicon FET FM Tuner ApplicationsFeatures Package Dimensions · Ideal for FM tuners in low-voltage radios, car radios,unit:mmetc.2040 ..
2SK2123 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C 2.54±0.25.08±0.4Parameter Symbol Ratings Unit1 237 Drain to So ..
2SK2123 ,Silicon N-Channel Power F-MOS FETFeaturesl Avalanche energy capacity guaranteed: EAS > 100mJunit: mml V = ±30V guaranteedGSSl High-s ..
2SK2123. ,Silicon N-Channel Power F-MOS FETPower F-MOS FETs2SK2123Silicon N-Channel Power F-MOS FETn
2SK2123.. ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C 2.54±0.25.08±0.4Parameter Symbol Ratings Unit1 237 Drain to So ..
2SK2124 ,Silicon N-Channel Power F-MOS FETAbsolute Maximum Ratings (T = 25°C)C 2.54±0.25.08±0.4Parameter Symbol Ratings Unit1 237 Drain to So ..
2SC3915
