2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
2SC3811 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3820 ,High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25''C unitCollector to Base Voltage Haro 60 VCollector to Emitter ..
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SC3825 ,Power TransistorPower Transistors . 25C382525C3825Silicon PNP TripIe—Diffused Planar TypeHigh Breakdown Voltage, Hi ..
2SK2003-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FET 2SK2003-01MRFAP-IIA Series600V 2,4Ω 40W>
2SK2003-01MR ,N-channel MOS-FETFeatures > Outline Drawing------VGS-Avalanche Proof>
2SK2004-01S ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2009 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch ApplicationsApplications High input impedance. Low gate threshold voltage: V = 0.5~1.5 V th Excellen ..
2SK2010 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC3810
