2SC3807 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High h , Low-FrequencyFEGenera ..
2SC3807. ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3807] · Large current capacity (I =2A).C · Adoption of MBIT process. · High DC current ..
2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
2SC3811 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3820 ,High-hFE, AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25''C unitCollector to Base Voltage Haro 60 VCollector to Emitter ..
2SC3822 ,Conductor Products, Inc. - BIPOLAR TRANSISSTORS RATINGS AND SPECIFICATIONS
2SK1982-01MR ,N-CHANNEL SILICON POWER MOSFETFeatures IOutline Drawings
. High speed switching
q LC w on-resistance 10:05 mm; woe
q No se ..
2SK1984-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FET 2SK2003-01MRFAP-IIA Series600V 2,4Ω 40W>
2SK2003-01MR ,N-channel MOS-FETFeatures > Outline Drawing------VGS-Avalanche Proof>
2SK2004-01S ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SC3807-2SC3807.
