2SC3803 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3803 ,Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
2SC3807 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2018ANPN Epitaxial Planar Silicon Transistor2SC3807High h , Low-FrequencyFEGenera ..
2SC3807. ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsFeatures [2SC3807] · Large current capacity (I =2A).C · Adoption of MBIT process. · High DC current ..
2SC3810 ,NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USEELECTRICAL CHARACTERISTICS (TA = 25 ° ° °C)° °PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITC ..
2SC3811 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SK1961 ,N-Channel Junction Silicon FET High-Frequency Low-Noise Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1968 , Silicon N-Channel MOS FET
2SK1982-01MR ,N-CHANNEL SILICON POWER MOSFETFeatures IOutline Drawings
. High speed switching
q LC w on-resistance 10:05 mm; woe
q No se ..
2SK1984-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FETApplications----> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK2003-01MR ,N-channel MOS-FET 2SK2003-01MRFAP-IIA Series600V 2,4Ω 40W>
2SC3803
Transistor Silicon NPN Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications
