2SC3739 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES
'i,', in millimeters E . High Gain Bandwidth Product:' fT =200 MHz MIN.
1 23:02 E '0 Com ..
2SC3739-T1B ,Silicon transistorDATA SHEET
NEG . éILICON +RANSIST0R
_ sucmou DEVICE
HIGH FREQUENCY AMPLIFIER AND SWITCHING ..
2SC3739-T2B ,Silicon transistorFEATURES
'i,', in millimeters E . High Gain Bandwidth Product:' fT =200 MHz MIN.
1 23:02 E '0 Com ..
2SC3743 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit2.54±0.3Collector-base voltage (Emit ..
2SC3746 ,NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching ApplicationsOrdering number:EN1973APNP/NPN Epitaxial Planar Silicon Transistors2SA1469/2SC374660V/5A High-Speed ..
2SC3747 ,NPN Epitaxial Planar Silicon Transistors 60V/7A High-Speed Switching ApplicationsOrdering number:EN1972APNP/NPN Epitaxial Planar Silicon Transistors2SA1470/2SC374760V/7A High-Speed ..
2SK1848 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1849 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK184-GR , Low Noise Audio Amplifier Applications
2SK1850 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
n“—
“- Vas-- 4V, ID=5A
VDs=10V,|D=1mA
CHARACTERIS ..
2SK1851 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
——-—-—m
-__“n_
Forward Transfer Admittance
Vos= 101 ..
2SK1853 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL
Drain to Source On-state Resistan ..
2SC3739
