2SC3736 ,Silicon transistorDATA SHEETSILICON TRANSISTOR2SC3736HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MIN ..
2SC3736-T1 ,Silicon transistorapplications. 1.6 ±0.2 1.5 ±0.1
2SC3738 ,Silicon NPN triple diffusion planar typeAbsolute Maximum Ratings (T =25˚C)nC1.52.0– 0.3Parameter Symbol Ratings Unit3.0– 0.3 2.7– 0.3–Coll ..
2SC3738 ,Silicon NPN triple diffusion planar typePower Transistors2SC3738Silicon NPN triple diffusion planar typeFor high breakdown voltage high-spe ..
2SC3738 ,Silicon NPN triple diffusion planar typeFeaturesnl High-speed switchingl Wide area of safe operation (ASO) with high breakdown voltage–l Sa ..
2SC3739 ,HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDFEATURES
'i,', in millimeters E . High Gain Bandwidth Product:' fT =200 MHz MIN.
1 23:02 E '0 Com ..
2SK1847 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage V ..
2SK1848 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1849 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK184-GR , Low Noise Audio Amplifier Applications
2SK1850 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
n“—
“- Vas-- 4V, ID=5A
VDs=10V,|D=1mA
CHARACTERIS ..
2SK1851 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
——-—-—m
-__“n_
Forward Transfer Admittance
Vos= 101 ..
2SC3736-2SC3736-T1
