2SC3709A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.APPLICATIONS Unit in mmLow Collector Saturation VoltageHigh Speed Switching TimeComplementary to 2S ..
2SC3709A-Y , High-Current Switching Applications
2SC3709A-Y , High-Current Switching Applications
2SC3710A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.2SC3710ATOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mm11wr 1:nATT I'nlr. LOW ..
2SC3710A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.2SC3710ATOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mm11wr 1:nATT I'nlr. LOW ..
2SC3714 , 2SC3714
2SK1771 ,Field Effect Transistor Silicon N-Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm Superior inter modulation performance. Low noise figure: NF = 1.0dB ( ..
2SK1772 , Silicon N-Channel MOS FET
2SK1792 ,Discrete SemiconductorsThermal CharacteristicsCHARACTERISTIG SYMBOL I MAX. UNITThermal Resistance, Channel lo Case B(clw.) ..
2SK1792 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MC) 3. SOURCECHARACTERISTICDrain-Source VoltageDrain-Gate Voltage (h ..
2SK1792 ,Discrete SemiconductorsFeaturesq 4-Volt Gate Drive. Low Drain-Source ON Resistance- RDS(ON) = 15mg fryp.)- High Forward Tr ..
2SK1796 ,MOS Field Effect Power TransistorFEATURES
0 Low On-state Resistance
RDS(on) E 1.2 Q (VGS = 10 V, ID = 5 A)
0 Low Ciss Ciss = 2 ..
2SC3709A
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
TOSHIBA 2SC3709A
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3709A
HIGH CURRENT SWITCHING APPLICATIONS Unit in mm
0 Low Collector Saturation Voltage : VCE (sat)=0-4V (Max.)
0 High Speed Switching Time : tstg=1.0/xs (Typ.) .
0 Complementary to 2SA1451A if,
MAXIMUM RATINGS (TC: 25°C) t
CHARACTERISTIC SYMBOL RATING UNIT 0.75 1 0.15 E
Collector-Base Voltage VCBO 60 V 2.54 10.25 2.54:0.25 '
Collector-Emitter Voltage VCEO 50 V m w.
Emitter-Base Voltage VEBO 6 V Ci, 1 2 3 _ g
Collector Current IC 12 A RILE_:[E
Base Current IB 2 A
. . . 1. BASE
fi111=etpgower Dissipation PC 30 W 2. COLLECTOR
( c= ) 3. EMITTER
Junction Temperature Ti 150 "C
a JEDEC -
Storage Temperature Range Tstg -55--150 C
JEITA -
TOSHIBA 2-10R1A
Weight : 1.7g (Typ.)
1 2001-11-05
TOSHIBA 2SC3709A
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60V, IE = 0 - - 10 PA
Emitter Cut-off Current IEBO VEB = 6V, IC = O - - 10 PA
Collector-Emi) Breakdown
Voltage V (BR) CEO IC - 50mA, IB - 0 50 - - V
hFE (1)
V =1V, I =1A 70 - 240
DC Current Gain (Note) CE C
hFE (2) VCE = IV, 10 = 6A 40 - -
Co11ector-Emitter Saturation
I = 6A, I = 0.3A - . .
Voltage VCE (sat) C B 0 25 0 4 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - 6A, IB - 0.3A - 0.9 1.2 V
Transition Frequency fT VCE = 5V, IC = IA - 90 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 180 - pF
Turn-on Time ton 20ps 1B1 OUTPUT - 0.2 -
I H INPUT -Tsrr Cl
Switching . BI Tb 132 m
Time Storage Time tstg IB2 - 1.0 - ,us
V = 30V
. IBI= -IB2--0.3A, CC
Fall Time tf DUTY CYCLE s 1% - 0.2 -
(Note) hFE(1) Classification 0 .' '70--140, Y : 120-240
2 2001-11-05
TOSHIBA
2SC3709A
10 (A)
COLLECTOR CURRENT
COLLECTOR—EMITTER VOLTAGE VCE (V)
DC CURRENT GAIN hp};
10 - VCE
lo COMMON
70 EMITTER
Tc = 25'C
IB=10mA
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - 1C
COMMON EMITTER
Tc = 100°C
40 80 100 150
0 2 4 6 8 10 12
COLLECTOR CURRENT 10 (A)
hFE - IC
COMMON EMITTER
300 VCE = 1V
Te = 100°C
100 ..
0.1 0.3 1 3 10 20
COLLECTOR CURRENT IC (A)
COLLECTOR—EMITTER VOLTAGE VCE (V) COLLECTOR—EMITTER VOLTAGE VCE
COLLECTOR—EMITTER SATURATION
VOLTAGE VCE (sat) (V)
VCE - IC
COMMON EMITTER
To = 25°C
40 60 80 l
0 2 4 6 8 10 12
COLLECTOR CURRENT 10 (A)
VCE - IC
COMMON EMITTER
Tc = - 55''C
IB=20mA
40 60 80 00 150 200
0 2 l 6 8 10 12
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON EMITTER
0.5 IGIIB=20
Tc = - 55°C
0.1 0.3 1 3 10 20
COLLECTOR CURRENT IC (A)
TOSHIBA
2SC3709A
VBE (sat) - IC
COMMON EMITTER
Ic/IB=20
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
'0.1 0.3 1 3 10 20
COLLECTOR CURRENT 10 (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA
(SINGLE NONREPETITIVE PULSE)
(D INFINITE HEAT SINK
C2) NO HEAT SINK
TRANSIENT THERMAL RESISTANCE
m, (°C/W)
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
SAFE OPERATING AREA
1 l l l l llll
IC MAX. (PULSED) X
k N lmsX
10 MAX. \ _
(CONTI- "N 's,
NUOUS) L ,
1 Il "N
3 - DC OPERATION Vt l
Tc = 25°C "s)), l
.yd. SINGLE NONREPETITIVE
0.3 PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE VCEO MAX.
1 3 10 30 100
10 (A)
COLLECTOR CURRENT
C0LLEcT0R-EMITTER VOLTAGE VCE (V)
10 (A)
COLLECTOR CURRENT
COLLECTOR DISSIPATION PC (W)
IC - VBE
COMMON EMITTER
VCE = IV
To: 100°C
0.4 0.8 1.2 1.6 2.0 2.4
BASE-EMITTER VOLTAGE VBE (V)
co Tc=Ta
INFINITE HEAT SINK
(2 NO HEAT SINK
40 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA 2SC3709A
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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www.loq.com
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