2SC3707 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3708 ,NPN Epitaxial Planar Silicon Transistor Low-Frequency Driver ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3709 ,NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING APPLICATIONS)APPLICATIONSUnit in mm11wr 1:nATT I'nlrLOW UOHBCEOI' 25aturat10n V Oltage 2 V CE (sat) = U.4 V UVla ..
2SC3709A ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.APPLICATIONS Unit in mmLow Collector Saturation VoltageHigh Speed Switching TimeComplementary to 2S ..
2SC3709A-Y , High-Current Switching Applications
2SC3709A-Y , High-Current Switching Applications
2SK1771 ,Field Effect Transistor Silicon N-Channel MOS Type FM Tuner, VHF RF Amplifier ApplicationsApplications Unit: mm Superior inter modulation performance. Low noise figure: NF = 1.0dB ( ..
2SK1772 , Silicon N-Channel MOS FET
2SK1792 ,Discrete SemiconductorsThermal CharacteristicsCHARACTERISTIG SYMBOL I MAX. UNITThermal Resistance, Channel lo Case B(clw.) ..
2SK1792 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MC) 3. SOURCECHARACTERISTICDrain-Source VoltageDrain-Gate Voltage (h ..
2SK1792 ,Discrete SemiconductorsFeaturesq 4-Volt Gate Drive. Low Drain-Source ON Resistance- RDS(ON) = 15mg fryp.)- High Forward Tr ..
2SK1796 ,MOS Field Effect Power TransistorFEATURES
0 Low On-state Resistance
RDS(on) E 1.2 Q (VGS = 10 V, ID = 5 A)
0 Low Ciss Ciss = 2 ..
2SC3707
