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2SC3675 from SAY

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2SC3675

Manufacturer: SAY

NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications

Partnumber Manufacturer Quantity Availability
2SC3675 SAY 1910 In Stock

Description and Introduction

NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications The 2SC3675 is a high-frequency, high-speed switching transistor manufactured by SAY. It is designed for use in RF amplifiers and oscillators. Key specifications include:

- **Type**: NPN Silicon Epitaxial Planar Transistor
- **Collector-Base Voltage (VCBO)**: 30V
- **Collector-Emitter Voltage (VCEO)**: 15V
- **Emitter-Base Voltage (VEBO)**: 3V
- **Collector Current (IC)**: 50mA
- **Total Power Dissipation (PT)**: 200mW
- **Transition Frequency (fT)**: 6GHz
- **Noise Figure (NF)**: 1.5dB (typical at 1GHz)
- **Gain (hFE)**: 20 to 200
- **Package**: TO-92

These specifications are typical for the 2SC3675 transistor as provided by SAY.

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