2SC3668 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS7.1MAX2.7MAX1.00 Low Saturation Voltage : VCE (sat)=0.5V(MaX.)0 High Speed Switching Ti ..
2SC3669 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS7.1MAX2.7MAX1.00 Low Saturation Voltage : VCE (sat)=0.5V(MaX.)0 High Speed Switching Ti ..
2SC3675 ,NPN Triple Diffused Planar Silicon Transistor 900V/100mA High-Voltage Amplifier High-Voltage Switching ApplicationsOrdering number:EN1800ENPN Triple Diffused Planar Silicon Transistor2SC3675900V/100mA High-Voltage ..
2SC3676 ,NPN Triple Diffused Planar Silicon Transistor 900V/300mA High-Voltage Amplifier High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3679 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SC3679 , Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
2SK1724 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at. Ta = 25°C unitDrain to Source Voltage Voss 30 VGate to Source Voltage ..
2SK1725 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage VDSS 30 VGate to Source Voltage V ..
2SK1725 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance.. Very high-speed switching.. Low-voltage drive.. Meets radial taping.
2SK1733 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2087A · Low-vol ..
2SK1738 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1745 , 2SK1745
2SC3668
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA 2SC3668
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3668
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS
7.1MAX
3.8 2.7MAX
0 Low Saturation Voltage : VCE (sat)=0.5V(Max.) -j2ij2 . 1'22...
0 High Speed Switching Time : tstg= 1.0ps (Typ.) c?
+0.15 F
0 Complementary to 2SA1428.
3.5MIN 4.7MAX
0.45-0.05 L loss, +0.15
2.54_I_2.54 (h4r-0.05
1 2 319251005
1. BASE
2. COLLECTOR
3. EMITTER
JEDEC -
JEITA -
TOSHIBA 2-7D101A
MAXIMUM RATINGS(Ta =25°C) Weight : 0.2g(Typ.)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emi) Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 2 A
Base Current IB 0.5 A
Collector Power Dissipation PC 1000 mW
J unction Temperature Tj 150 T
Storage Temperature Range Tstg -55--150 T
1 2001-11-05
TOSHIBA 2SC3668
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 50V, IE = O - - 1.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1.0 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - 10mA, IB - 0 50 - - V
hFE (1)
= 2 I = . A - 24
DC Current Gain (Note) VCE V, C 0 5 70 0
hFE (2) VCE = 2V, IC = 1.5A 40 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - IA, IB - 0.05A - - 0.5 V
Base-Emitter Saturation
Vol tage VBE (sat) IC - IA, IB - 0.05A - - 1.2 V
Transition Frequency fT VCE = 2V, IC = 0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = 1MHz - 30 - pF
. OUTPUT
Turn-on Time ton 20/15 1B1 - 0.1 -
s it hi o H INPUT -Fsrv g
WI c mg . I131 'lil IB2 00
Time Storage Time tstg 1B2 - 1.0 - ps
. 1B1 = -IB2=0.05A, VCC=30V
(Note) : hFE(1) Classification o : 70--140, Y : 120--240
2 2001-11-05
TOSHIBA 2SC3668
IC - VCE VCE - IC
COMMON EMITTER
Ta = 25''C
COMMON
EMITTER
Ta = 25''C
0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT 10 (A)
COLLECTOR—EMITTER VOLTAGE VCE
0 2 4 6 8 10 12 14
C0LLECT0R-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE - IC VCE - IC
COLLECTOR-EMITTER, VOLTAGE VCE
COLLECTOR-EMITTER VOLTAGE VCE
COMMON
COMMON EMITTER EMITTER
Ta = 100°C Ta = -55''C
O 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
hFE - IC
COMMON EMITTER
500 VCE=2V VCE (sat) - IC
COMMON EMITTER
300 0.5 IcllB=20
Ta = 100°C
50 0.1
Ta = 100°C
DC CURRENT GAIN hFE
COLLECTOR-EMITTER SATURATION
VOLTAGE vows”) (V)
0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
3 2001-11-05
TOSHIBA
2SC3668
VBE (sat) - IC
COMMON EMITTER
IC/IB =20
Ta = - 55°C
VBE (sat) (V)
BASE-EMITTER SATURATION VOLTAGE
0.01 0.03 0.1 0.3 1 2
COLLECTOR CURRENT IC (A)
COLLECTOR DISSIPATION PC (W)
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
10 (A)
COLLECTOR CURRENT
10 (A)
COLLECTOR CURRENT
IC - VBE
I I COMMON EMITTER
I f VCE=2V
1.0 II
0.5 - Ta= 100°C j-j 25 -55
o 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
IC MAX. (PULSED) It.
3 Ims)k.
IC MAX. 10msy.4
1 (CONTINUOUS) 100rnsW.
DC OPERATION
Ta=25''C
ik. SINGLE NONREPETITIVE
PULSE Ta=25°C
0.01 CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATUR
.l 0.3
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 30 100
TOSHIBA 2SC3668
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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