2SC3657 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.2SC36577QC26E7SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm' _ U”UMAXIMUM RATINGS (Tc = ..
2SC3657 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.2SC36577QC26E7SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm' _ U”UMAXIMUM RATINGS (Tc = ..
2SC3657 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.2SC36577QC26E7SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm' _ U”UMAXIMUM RATINGS (Tc = ..
2SC3661 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3663 ,NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3663NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUE ..
2SC3668 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS7.1MAX2.7MAX1.00 Low Saturation Voltage : VCE (sat)=0.5V(MaX.)0 High Speed Switching Ti ..
2SK170 ,Field Effect Transistor Silicon N Channel Junction Type Low Noise Audio Amplifier ApplicationsApplications Unit: mm Recommended for first stages of EQ and M.C. head amplifiers. High |Y ..
2SK170-BL , Low Noise Audio Amplifier Applications
2SK170-BL , Low Noise Audio Amplifier Applications
2SK170-GR , Low Noise Audio Amplifier Applications
2SK170-GR , Low Noise Audio Amplifier Applications
2SK1724 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at. Ta = 25°C unitDrain to Source Voltage Voss 30 VGate to Source Voltage ..
2SC3657
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
TOSHIBA 2SC3657
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC3657
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm
APPLICATIONS
15.9MAX. 3 $02
HIGH SPEED DC-DC CONVERTER APPLICATIONS et
0 Excellent Switching Times : tr = 1.0 gs (Max.), tf = 1.0ps(Max.) . g
0 High Collector Breakdown Voltage : VCEO = 800V g 3
MAXIMUM RATINGS (Tc = 25°C) 'is
CHARACTERISTIC SYMBOL RATING UNIT 2
Collector-Base Voltage VCBO 900 V 5.45t0.2 1 2 3 5.45t0.2
Collector-Emitter Voltage VCEO 800 V tl Cir;
Emitter-Base Voltage VEBO 7 V t, 'ii,, _2 "ii'
I 4 A cc, C"-"'-'-'!'-'; E
Collector Current 1321:; fi, 8 A k;
DC IB 2 A 1. BASE
Base Current P 1 I 5 A 2. COLLECTOR (HEAT SINK)
C 11 t P Di . ti ll se BP 3. EMITTER
o ec or ower 1ss1pa 10n
(Tc = 25°C) C 80 W JEDEC -
J unction Temperature Tj 150 "C JEITA -
Storage Temperature Range Tstg -55-150 "C TOSHIBA 2-16C1A
Weight : 4.7 g(Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 800 V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 7 V, IC = 0 - - 1 mA
Collector-Base Breakdown
Voltage V (BR) CBO IC - 1 mA, IE - 0 900 - - V
Collector-Emir Breakdown
Voltage V (BR) CEO 10 - 10 mA, IB - 0 800 - - V
DC Current Gain hFE VCE = 5 V, IC = 1 A 10 - -
Collector-Emitter Saturation - -
Voltage VCE (sat) IC - 2A, IB - 0.4A - - 1.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 2A, IB - 0.4A - - 1.5 V
20 S I = IA
Rise Time tr b'/ 113,1 ce - - 1.0
1B H l INPUTO - C: OUT-
. . O PUT
gwltchlng Storage Time tstg IB2 IB2 " - - 2.5 ps
1me VCC = 400 V
. IBI = -1B2 = -0.4A
Fall Time tf DUTY CYCLE s 1% - - 1.0
1 2001-08-23
TOSHIBA
IC - VCE
10 (A)
COLLECTOR CURRENT
0 l 2 3
13 = 100mA
COMMON EMITTER
Tc = 25''C
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat)
COMMON EMITTER
IC/IB = 5
COLLECTOR-EMITTER SATURATION
VOLTAGE chm) (V)
0.01 0.03 0.1 0.3 1 3
COLLECTOR CURRENT IC (A)
COMMON EMITTER
VCE = 5 V
IC - VBE
0 Te = 100°C
0 0.2 0.4 0.6
BASE-EMITTER VOLTAGE VBE (V)
0.8 1.0 1.2
BASE-EMITTER SATURATION VOLTAGE
DC CURRENT GAIN hm
VBE (sat) (V)
SWITCHING TIME (#5)
2SC3657
hFE - IC
COMMON EMITTER
VCE=5V
Te = 100°C
0.1 0.3 1 3
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON EMITTER
IC/IB = 5
Te = -55T
0.1 0.3 1 3
COLLECTOR CURRENT 10 (A)
SWITCHING CHARACTERISTICS
IC = 10131 = -2.5iB2
PULSE WIDTH = 20 Ms
DUTY CYCLE s 1%
Te = 100'C
tr 100°C
tf 100°C
tf 25'C
tr 25°C
0.8 1.2 1.6 2.0 2.4 2.8
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC3657
rth - tw PC - Te
m CURVES SHOULD BE APPLIED IN THERMAL
'si LIMITED AREA. k?
5 (SINGLE NONREPETITIVE PULSE) a
bl', co INFINITE HEAT SINK 2
'le', C)) No HEAT SINK E
0.001 0.01 0.1 1 10 100 1000 0 40 80 120 160 200 240
PULSE WIDTH tw (s) CASE TEMPERATURE Te (°C)
SAFE OPERATING AREA
l l I II llll I l
I I I I I I III I I
10 IC MAX. (PULSED) .y.4
It" \ ' , 10 pts).k.
5 IC MAX. (CONTINUOUS) N x 0ppsy.f
S? 3 IIIIII , - A , r
l l llll ....-- l w
- .../ - -
E 1 1ms>2< ----" t I. N
g 10 ms).k. ', ',
g 0.5 llll l
ttt 0.3 DC OPERATION N, , l
0 Te = 25"C , ,
a 0.1 Il IIIIIIII\ J
j 0 05 .)k. SINGLE NONREPETITIVE \
8 . PULSE Tc = 25°C , -
0.03 CURVES MUST BE DERATED " VCEO-
LINEARLY WITH INCREASE " MAX. _
0 01 IN TEMPERATURE. l l
l 3 10 30 100 300 1000 3000
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-08-23
TOSHIBA 2SC3657
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-08-23
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