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2SC3646SANYON/a12000avaiNPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications


2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647T-TD-E , Bipolar Transistor
2SC3649 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3650 ,NPN Epitaxial Planar Silicon Transistor High hFE, Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN1780ANPN Epitaxial Planar Silicon Transistor2SC3650High h , Low-FrequencyFEGenera ..
2SK1657-T1B ,MOS field effect transistor2.9i0.2 1.1 to 1.4 Oto 0.1 . Source . Gate Drain G19 1 2 MARK: Gate(G) N-C ..
2SK1657-T2B ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C) PARAMETER SYMBOL 2SK1657 TEST CON DlTl ONS D ..
2SK1658 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 "C) PARAMETER SYMBOL . . . TEST CONDITIONS Drain Cut-off Cu ..
2SK1663 ,N-CHANNEL SILICON POWER MOS-FETApplications --" j [ ' a _", (ole i we 'tr, "Switching regulators J' em _ W , or, I an I' 5,08 ..
2SK1669 , Silicon N-Channel MOS FET
2SK1669 , Silicon N-Channel MOS FET


2SC3646

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