2SC3631-Z ,NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3applications. ' 2. Collector
. 3. Emitter
_ 4. Collector
_ ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C) ..
2SC3632 ,Silicon transistorFEATURES
q High Voltage Vceo = 600 V
. High Speed tt < 0.5 us ti' ti
0 Complement to 2SA1413 ..
2SC3642 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsOrdering number: EN1626?2803642NPN Triple Diffused Planar Silicon TransistorUltrahigh-Definition Di ..
2SC3644 ,Ultrahigh-Definition Display Horizontal Deflection Output ApplicationsAbsolute Maximum Ratings at Ta =25°C unitCollector-to-Base Voltage V0130 1200 - VCollector-to-Emitt ..
2SC3646 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3647 ,NPN Epitaxial Planar Silicon Transistors High-Voltage Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SK1645 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK1646 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SK165 ,Si N-channel junction. Wide-band, low-noise amplifier.Electrical Characteristics (Ta = 25 "C)Item Symbol Condition min. typ. max. UnitF V 4 V ttitr, Irss ..
2SK1657 ,N-CHANNEL MOS FET FOR SWITCHING2.9i0.2
1.1 to 1.4
Oto 0.1
. Source
. Gate
Drain
G19
1
2
MARK:
Gate(G)
N-C ..
2SK1657-T1B ,MOS field effect transistor2.9i0.2
1.1 to 1.4
Oto 0.1
. Source
. Gate
Drain
G19
1
2
MARK:
Gate(G)
N-C ..
2SK1657-T2B ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 0C)
PARAMETER
SYMBOL
2SK1657
TEST CON DlTl ONS
D ..
2SC3631-Z
