2SC3622A-T ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOW–FREQUENCY ..
2SC3623 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
NPN SILICON TRANSISTOR
ZSC3623
PACKAGE DIMENSIONS
..
2SC3624 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD‘NSILICONWTRANSISWT0RMS
ZSC3624, ZSC3624A
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON E ..
2SC3624A ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SC3624A-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SC3624-T1B ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SK161 ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admit ..
2SK1611 ,V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplificationAbsolute Maximum Ratings (T = 25°C)CParameter Symbol Ratings Unit1.3±0.2Drain to Source breakdown v ..
2SK1622 , Silicon N-Channel MOS FET
2SK1622 , Silicon N-Channel MOS FET
2SK1623 , Silicon N-Channel MOS FET
2SK1645 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SC3622-2SC3622A-T
