2SC3621 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONSApplications for Line Operated TV.0 Complementary to 2SA1408.MAXIMUM RATINGS (Tc = 25°C)CHARACTERIS ..
2SC3622 ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOW–FREQUENCY ..
2SC3622A-T ,Silicon transistorDATA SHEETSILICON TRANSISTORS2SC3622, 3622ANPN SILICON EPITAXIAL TRANSISTORFOR LOW–FREQUENCY ..
2SC3623 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
NPN SILICON TRANSISTOR
ZSC3623
PACKAGE DIMENSIONS
..
2SC3624 ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD‘NSILICONWTRANSISWT0RMS
ZSC3624, ZSC3624A
AUDIO FREQUENCY AMPLIFIER, SWITCHING
NPN SILICON E ..
2SC3624A ,AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta =
CHARACTERISTIC SYMBOL
2SK161 ,Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier ApplicationsApplications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admit ..
2SK1611 ,V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplificationAbsolute Maximum Ratings (T = 25°C)CParameter Symbol Ratings Unit1.3±0.2Drain to Source breakdown v ..
2SK1622 , Silicon N-Channel MOS FET
2SK1622 , Silicon N-Channel MOS FET
2SK1623 , Silicon N-Channel MOS FET
2SK1645 ,For C to X-band Local Oscillator and AmplifierAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SC3621
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) COLOR TV VERT. DEFLECTION OUTPUT AND COLOR TV CLASS B SOUND OUTPUT APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3621
COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS
2SC3621
Unit in mm
COLOR TV CLASS B SOUND OUTPUT APPLICATIONS 8.3MAX.
i t....Air!L., gt3.1+-0.1
sl '' kj, Q rn
0 Large Collector Current and Collector Power Dissipation iyi?fy L. sk tl I
Capability. ir', :
Recommended for Vert. Deflection Output and Sound Output
Applications for Line Operated TV.
0.75i0.15
14.0MIN.
Complementary to 2SA1408.
MAXIMUM RATINGS (Tc = 25°C)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL RATING UNIT -- 'e E
u, _u' nu ma is :13
Collector-Base Voltage VCBO 150 V g - "4
Collector-Emitter Voltage VCEO 150 V K l. EMITTER
. Ct 2. COLLECTOR
Emitter-Base Voltage VEBO 6 V 3. BASE
Collector Current 10 1.5 A JEDEC -
Base Current IB 1.0 A JEITA -
Cgllgctor: Power Ta=25°C PC 1.5 W TOSHIBA 2-8H1A
Dissipation Te = 25°C 10 .
Weight : 0.82g (Typ.)
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55-150 ''C
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 150V, IE = 0 - - 1.0 pA
Emitter Cut-off Current IEBO VEB = 6V, IC = 0 - - 1.0 pA
Collector-Emi) Breakdown
Voltage V (BR) CEO IC - 10mA, IB - 0 150 - - V
DC Current Gain hFE (Note) VCE 25V, 10 =200mA 60 - 200
Collector-Emitter Saturation
Voltage VCE (sat) IC - 500mA, IB - 50mA - - 1.5 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 5mA 0.5 - 0.8 V
Transition Frequency fT VCE = 5V, 10 = 200mA 20 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = IMHz - 13 20 pF
(Note) : hFE Classification
R : 60--120, O : 100--200
TOSHIBA
Ic (A)
DC CURRENT GAIN hFE COLLECTOR CURRENT
COLLECTOR—EMITTER SATURATION
VOLTAGE vows“) (V)
IC - VCE
COMMON
EMITTER
Tc = 25°C
IB=1mA
0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
300 Tc= 100°C
50 COMMON EMITTER
VCE=10V
----- VCE=5V \ '
30 100 300 1000
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
COMMON EMITTER
0.3 IC/IB=10
Tc=100°C
0.05 25
10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
DC CURRENT GAIN hFE
COLLECTOR-EMITTER SATURATION
VOLTAGE vows“) (V)
10 (A)
COLLECTOR CURRENT
2SC3621
hFE - IC
COMMON EMITTER
Tc = 25°C
5 VCE= 10V
30 100 300 1000
COLLECTOR CURRENT IC (mA)
VCE (sat) - IC
COMMON EMITTER
Tc=25°C
Ic/IB=10
30 100 300 1000
COLLECTOR CURRENT 10 (mA)
1C - VBE
Te-- 100°C
COMMON EMITTER
VCE = 5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE-EMITTER VOLTAGE VBE (V)
TOSHIBA
fT - IC
COMMON EMITTER
Tc = 25°C
TRANSITION FREQUENCY fT (MHz)
3 10 30 100 300
COLLECTOR CURRENT IC (mA)
SAFE OPERATING AREA
5 I I I I III I
_IC MAX. (PULSED) .)rd.
3 I I I I III
10 MAX. N I,
"CONTINUOUS) ‘ "s,
E "N, t "s... lmsX
V 1 'N. l l ts 10msX_
S? N 't , -100m )x.'(.=
N . , S . -
a 0.5 N N
e 0.3 DC OPERATION N ll
T =25''C
8 " I I I N. s)
[a,' )k. SINGLE NONREPETITIVE "ss N,
8 0.1 PULSE Tc=25°C s, h
CURVES MUST BE DERATED N,
0.05 LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX. -
0.03 , . . , '
3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR OUTPUT CAPACITANCE
Cob (PF)
2SC3621
Cob - VCB
COMMON EMITTER
f = 1MHz
Te = 25°C
l 3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
TOSHIBA 2SC3621
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
www.loq.com
.
