2SC3607 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 9.5dB (f = 1 GHz) 21 ..
2SC3611 ,Power DevicePower Transistors2SC3611Silicon NPN epitaxial planar typeFor video amplifierUnit: mm+0.58.0–0.13.2± ..
2SC3615 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERlSTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SC3616 ,NPN SILICON TRANSISTORapplications
requiring High DC Current Gain.
This is suitable for all kind of driving, instead ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SC3617-T1 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SK1588 ,N-CHANNEL MOS FET FOR SWITCHINGDATA SHEET
MOS FIELD EFFECT TRANSISTOR
ZSK1 588
N-CHANNEL MOS FET
FOR SWITCHING
PACKAG ..
2SK1588-T1 ,N-channel MOS FETDATA SHEET
MOS FIELD EFFECT TRANSISTOR
ZSK1 588
N-CHANNEL MOS FET
FOR SWITCHING
PACKAG ..
2SK1589 ,N-CHANNEL MOS FET FOR SWITCHINGapplications.
Source(S)
(Diode in the figure is the parasitic diode.)
ABSOLUTE MAXIMUM RAT ..
2SK1589-T1B ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER L SYMBOL . . . TEST CONDITIONS
Drain Cut-of ..
2SK1590 ,N-channel MOS FETDATA SHEET
NEC/
N-CHANNEL MOS FET
MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
2.8:02
..
2SK1590 ,N-channel MOS FETDATA SHEET
NEC/
N-CHANNEL MOS FET
MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
2.8:02
..
2SC3607
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3607 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 9.5dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Note 1: When mounted ceramic substrate of 250 mm2 � 0.8 t
Microwave Characteristics (Ta ��� � 25°C) VCE � 10 V, IC � 40 mA, f � 1 GHz � 1.8
Electrical Characteristics (Ta ��� � 25°C) Cre VCB � 10 V, IE � 0, f � 1 MHz (Note 2)
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.05 g (typ.)
