2SC3606 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC3607 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 9.5dB (f = 1 GHz) 21 ..
2SC3611 ,Power DevicePower Transistors2SC3611Silicon NPN epitaxial planar typeFor video amplifierUnit: mm+0.58.0–0.13.2± ..
2SC3615 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERlSTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SC3616 ,NPN SILICON TRANSISTORapplications
requiring High DC Current Gain.
This is suitable for all kind of driving, instead ..
2SC3617 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDELECTRICAL CHARACTERISTICS (Ta = 25 oc)'
CHARACTERISTIC SYMBOL TYP. MAX. UNIT TEST CONDITIONS
..
2SK1585-T1 ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 0CI
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SK1586 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 0C)
2SKI586
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CON ..
2SK1586-T1 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 0C)
2SKI586
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CON ..
2SK1587 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 oC)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SK1587-T1 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 oC)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SK1588 ,N-CHANNEL MOS FET FOR SWITCHINGDATA SHEET
MOS FIELD EFFECT TRANSISTOR
ZSK1 588
N-CHANNEL MOS FET
FOR SWITCHING
PACKAG ..
2SC3606
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications
2SC3606 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC3606 VHF~UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)
Maximum Ratings (Ta ��� � 25°C)
Microwave Characteristics (Ta ��� � 25°C)
�S21e�2 (1) VCE � 10 V, IC � 5 mA, f � 1 GHz
Electrical Characteristics (Ta ��� � 25°C) Cre
Note: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
Weight: 0.012 g (typ.)
