2SC3601 ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3601 ,NPN Epitaxial Planar Silicon Transistors Ultrahigh-Definition CRT Display Video Output ApplicationsFeatures · High f : f typ=400MHz.T T · High breakdown voltage : V ‡ 200V.CEO · Small reverse transf ..
2SC3606 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 11dB (f = 1 GHz) 21e ..
2SC3607 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure, high gain. 2 NF = 1.1dB, |S | = 9.5dB (f = 1 GHz) 21 ..
2SC3611 ,Power DevicePower Transistors2SC3611Silicon NPN epitaxial planar typeFor video amplifierUnit: mm+0.58.0–0.13.2± ..
2SC3615 ,NPN SILICON TRANSISTORELECTRICAL CHARACTERISTICS (Ta = 25 °C)
SYMBOL CHARACTERlSTlC MIN. TYP. MAX. UNIT
DC Current Ga ..
2SK1584-T1 ,MOS field effect transistorFEATURES 0.42 0.42±0.06±0.060.47• Can be driven by a 5-V power source.1.5 ±0.06 +0.030.41-0.05• L ..
2SK1585 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 0CI
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SK1585-T1 ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta = 25 0CI
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SK1586 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 0C)
2SKI586
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CON ..
2SK1586-T1 ,N-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 0C)
2SKI586
PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CON ..
2SK1587 ,N-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 oC)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SC3601
