2SC3506 ,Power DeviceAbsolute Maximum Ratings T = 25°C1.1±0.1 0.6±0.2CParameter Symbol Rating UnitCollector-base voltag ..
2SC3506 ,Power DeviceFeatures• High-speed switchingφ 3.2±0.1• High collector-base voltage (Emitter open) VCBO• Satisfact ..
2SC3507 ,Power DeviceAbsolute Maximum Ratings T = 25°CCParameter Symbol Rating Unit5.45±0.3Collector-base voltage (Emit ..
2SC3513 , Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
2SC3514 , PNP/NPN SILICON EPITAXIAL TRANSISTOR
2SC3518 ,Silicon transistorFEATURES .. V d: 0 5:.e.0 1,
. High DC Current Gain hFE = 100 to 400 _ . I Cy-s-tip-l - .
. q Low ..
2SK1474 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1474 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2083B · Low-vol ..
2SK1475 ,Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions · Low ON resistance.unit:mm · Ultrahigh-speed switching.2083B · Low-vol ..
2SK1482 ,N-Channel MOS FET FOR SwitchingMOS FIELD EFFECT TRANSISTOR
2SKI 482
N-CHANNEL MOS FET
FOR SWITCHING
-ictprba-'trtrtgrT- ..
2SK1483 ,N-CHANNEL MOS FET FOR SWITCHINGFEATURES
q Can be driven directly from an IC operating with a 5 V single
power supply.
0 Low O ..
2SK1483-T1 ,N-channel MOS FETFEATURES
q Can be driven directly from an IC operating with a 5 V single
power supply.
0 Low O ..
2SC3506
