2SC3474 ,Transistor Silicon NPN Epitaxial Type Switching Applications Solenoid Drive ApplicationsApplications Unit: mmSolenoid Drive
2SC3478 ,NPN SILICON TRANSISTORSELECTRICAL CHARACTERISTICS (Ta lat 25 °C) _
2SC3478/2SC3478A
SYMBOL
CHARACTERISTIC
MAX.
..
2SC3478A ,NPN SILICON TRANSISTORSFEATURES
I High Breakdown Voltage.
The 2SC3478/3478A is designed for general-purpose applica- ..
2SC3478A ,NPN SILICON TRANSISTORSNEiiiC:
DESCRIPTION
2SC3481 ,NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR
2SC3496A ,Power DeviceFeatures• High-speed switching• High collector-base voltage (Emitter open) VCBO0 to 0.4• Satisfacto ..
2SK1403 , Silicon N-Channel MOS FET
2SK1412 ,High-Voltage High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage VDSS 1500 VGabe to Source Voltage ..
2SK1417 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1419 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1420 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1430 ,N-Channel Silicon MOSFET Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SC3474
Transistor Silicon NPN Epitaxial Type Switching Applications Solenoid Drive Applications
2SC3474 TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3474 Switching Applications
Solenoid Drive Applications High DC current gain: hFE = 500 (min) (IC = 400 mA) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 300 mA)
Maximum Ratings (Ta = 25°C) Industrial Applications
Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
