2SC3425 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS i,zi2-2i-iS-2eztrr=1i-s1-a,).70 Excellent Switching Times4n A'ThW" . "ertr=l.U/ZS (Max ..
2SC3429 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.5dB, |S | = 16dB (f = 500 MHz) 21e2 NF = 1 ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Sw ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter ApplicationsApplications High transition frequency: f = 400 MHz (typ.) T Low saturation voltage: V = 0. ..
2SC3438 , FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3439 , SMALL-SIGNAL TRANSISTOR FOR SMALL TYPE MOTOR PLUGER DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SK1340 , Silicon N-Channel MOS FET
2SK1350 , 2SK1350
2SK1350 , 2SK1350
2SK1357 , 2SK1357
2SK1357 , 2SK1357
2SK1358 ,Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PNThermal CharacteristicsCHARACTERISTIC SYMBOL MAX. UNITThermal Resistance, Channel to Case R 0.833
2SC3425
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER APPLICATIONS
TOSHIBA
2SC3425
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC3425
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING
Unit in mm
APPLICATIONS 8.3MAX
HIGH SPEED DC-DC CONVERTER APPLICATIONS sl 539-: “mm
/' m g
0 Excellent Switching Times 3%) t, if E i
.' tr=1.0ps (Max.), tf= 1.5ps (Max.) at IC=0.5A I i .-
0 High Collector Breakdown Voltage : VCEO=400V 1.0MAX, l '
MAXIMUM RATINGS (Tc=25°C) 2,33%” 1 E
CHARACTERISTIC SYMBOL RATING UNIT -
Collector-Base Voltage VCBO 500 V 2.3.t0.1 2.3.t0.1
Collector-Emitter Voltage VCEO 400 V 1 s', 3 m .
Emitter-Base Voltage VEBO 7 V m — m min up _ Fl g
DC IC 0.8 A § - "i
Collector Current Pulse ICP 1.5 A ii, l. EMITTER
2. COLLECTOR
Base Current IE 0.5 A 3. BASE
Cgugctog Power Ta=25°C PC 1.2 w JEDEC -
Dissipation Te = 25°C 10
. JEITA -
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55-150 T TOSHIBA 2-8HIA
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Weight : 0.82g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB =400V, IE =0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 7V, IC = 0 - - 100 PA
Collector-Base Breakdown
Voltage V (BR) CBO IC = lmA, IE =0 500 - - v
Collector-Emitter Breakdown
Voltage V (BR) CEO IC = 10mA, IB = 0 400 - - v
. VCE = 5V, IC = 0.1A 20 - 100
C Current Gain hFE VCE = 5V, 10 = o. 5A 10 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC = 0.1A, IB = 0.01A - - 0.5 V
Base-Emitter Saturation
Voltage VBE (sat) IC = 0.1A, IB = 0.01A - - 1.0 V
Rise Time tr 23/48 IBI OUTPUT - - 1.0
Switching . IBI INPUT Fst g
Time Storage Time tstg 1'15le IB2 , 3 - - 2.5 ,us
. 1B1 = -IB2--0.05A,V '=.200V - - 1.5
Fall Time tf DUTY CYCLES 1% CC
TOSHIBA
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
VOLTAGE vcmm, (V)
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
IC - VCE
COMMON EMITTER
Te = 25''C
0 2 4 6 8 10 12
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 10
1 3 10 30 100 300 1000
COLLECTOR CURRENT 10 (mA)
VBE(sat) - 1C
COMMON EMITTER
IC/IB=10
Tc = - 40°C
1 3 10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE chw) (V) DC CURRENT GAIN hFE
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
hFE - IC
Te = 1 00'C
2SC3425
COMMON EMITTER
VCE = 5V
3 10 30
COLLECTOR CURRENT
100 300 1000
IC (mA)
VCE (sat) - IC
COMMON EMITTER
1C / 1B = 5
25 - 40
3 10 30
COLLECTOR CURRENT
100 300 1000
10 (mA)
VBE (sat) - IC
COMMON EMITTER
1C / 113 = 5
3 10 30
COLLECTOR CURRENT
100 300 1000
Ic (mA)
TOSHIBA
2SC3425
Ic (A)
COLLECTOR CURRENT
SWITCHING TI ME (/15)
("C / W)
TRANSIENT THERMAL RESISTANCE
IC - VBE
COMMON EMITTER
VCE = 5V
Te = 100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
SWITCHING CHARACTERISTICS
50 IC/IB = 10
30 IBI = -IB2
PULSE WIDTH=20/zs
DUTY CYCLES 1%
Tc=25°C
0 0.1 0.2 0.3 0.4 0.5
COLLECTOR CURRENT 10 (A)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA
(SINGLE NONREPETITIVE PULSE)
co INFINITE HEAT SINK
(2) No HEAT SINK
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (s)
COLLECTOR CURRENT 1C (mA)
10 (A)
COLLECTOR CURRENT
IC - VBE
COMMON EMITTER
VCE = 5V
Tc = 1 00°C
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
SAFE OPERATING AREA
10 MAX. (PULSED) A.'.
10ps).k.
100prsyd'
IC MAX.
(CONTINUOUS)
I I I I I
DC OPERATION
Tc = 25'C
10ms).k.
100msX
X SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE
DERATED LINEARLY WITH
INCREASE IN
TEMPERATURE
VCEO MAX.
1 0 30 100 300 1 000
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3425
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
www.loq.com
.
