2SC3423 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3425 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS i,zi2-2i-iS-2eztrr=1i-s1-a,).70 Excellent Switching Times4n A'ThW" . "ertr=l.U/ZS (Max ..
2SC3429 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.5dB, |S | = 16dB (f = 500 MHz) 21e2 NF = 1 ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Sw ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter ApplicationsApplications High transition frequency: f = 400 MHz (typ.) T Low saturation voltage: V = 0. ..
2SC3438 , FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
2SK1338 , Silicon N-Channel MOS FET
2SK1339 , Silicon N Channel MOS FET
2SK1340 , Silicon N-Channel MOS FET
2SK1350 , 2SK1350
2SK1350 , 2SK1350
2SK1357 , 2SK1357
2SC3423
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS
TOSHIBA
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
ZSC3423
AUDIO FREQUENCY AMPLIFIER APPLICATIONS
2SC3423
Unit in mm
8.3MAX.
l r-S-i-) ¢3.1:0.1
0 Complementary to 2SA1360 3+ 'd L' un.
. o"gy'ir-: "’ 2 I
0 Small Collector Output Capacitance l Cob=1.8pF (Typ.) 'd g
0 High Transition Frequency : fT=200MHz (Typ.) i.r5. .-
(h75AO.15 2
MAXIMUM RATINGS (Tc = 25°C) 3
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 150 V
Collector-Emitter Voltage VCEO 150 V m - m, w is - ,- -II.i.s.,t..
Emitter-Base Voltage VEBO 5 V g - oi
r: 1. EMITTER
Collector Current IC 50 mA c, 2. COLLECTOR
Base Current IB 5 mA 3. BASE
Collector Power Ta=25°C P 1.2 W JEDEC -
Dissipation Te = 25°C C 5 JEIT A -
Junction Temperature Tj 150 "C TOSHIBA 2-8H1A
Storage Temperature Range Tstg -55--150 "C Weight : 0.82g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 150V, IE = 0 - - 0.1 PA
Emitter Cut-off Current IEBO VEB = 5V, 1C = 0 - - 0.1 PA
. hFE - -
DC Current Gain (Note) VCE - 5V, IC - 10mA 80 - 240
Collector-Emitter Saturation - -
Voltage VCE (sat) IC - lOmA, IB - 1mA - - 1.0 V
Base-Emitter Voltage VBE VCE = 5V, IC = 10mA - - 0.8 V
Transition Frequency fT VCE = 5V, IC = 10mA - 200 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = IMHz - 1.8 - pF
(Note) : hFE Classification
o .' 80--160, Y .' 120--240
TOSHIBA
2SC3423
COLLECTOR CURRENT
COLLECTOR CURRENT
DC CURRENT GAIN hFE
IC - VCE
COMMON
EMITTER
Te = 25''C
2 4 6 8 10 12 1
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VBE
COMMON EMITTER
VCE = 5V
Tc = 100°C
02 0.4 0.6 0.8 1.0 1.2 l,
BASE-EMITTER VOLTAGE VBE (V)
hFE - 1C
COMMON EMITTER
VCE=5V
Te = 1 00°C
1 3 10
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER
SATURATION VOLTAGE
TRANSITION FREQUENCY
COLLECTOR POWER DISSIPATION
COLLECTOR OUTPUT
CAPACITANCE Cob (FF)
PC (W)
VCE (sat)
VCE (sat) - IC
_iii COMMON EMITTER
IC/IB=10
0.3 1 3 10 30
COLLECTOR CURRENT IC (mA)
fT - IC
COMMON EMITTER
v =1ov
300 Tc=25°C CE
0.5 1 3 10 30 100
COLLECTOR CURRENT IC (mA)
Cob - VCB
0.5 1 3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
(1) Tc=Ta INFINITE HEAT SINK
(2) NO HEAT SINK
0 20 40 60 80 100 120 140 160 180
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA 2SC3423
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
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