2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC3423 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3425 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS, HIGH SPEED DC-DC CONVERTER APPLICATIONSAPPLICATIONS i,zi2-2i-iS-2eztrr=1i-s1-a,).70 Excellent Switching Times4n A'ThW" . "ertr=l.U/ZS (Max ..
2SC3429 ,Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier ApplicationsApplications Unit: mm Low noise figure 2 NF = 1.5dB, |S | = 16dB (f = 500 MHz) 21e2 NF = 1 ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter Applications2SC3437 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3437 Ultra High Speed Sw ..
2SC3437 ,Transistor Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications Computer, Counter ApplicationsApplications High transition frequency: f = 400 MHz (typ.) T Low saturation voltage: V = 0. ..
2SK1335 , Silicon N-Channel MOS FET
2SK1335 , Silicon N-Channel MOS FET
2SK1336 , Silicon N-Channel MOS FET
2SK1338 , Silicon N-Channel MOS FET
2SK1339 , Silicon N Channel MOS FET
2SK1340 , Silicon N-Channel MOS FET
2SC3422
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING
TOSHIBA 2SC3422
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3422
AUDIO FREQUENCY POWER AMPLIFIER Unit in mm
LOW SPEED SWITCHING 8.3MAX.
i t....Air!L., gt 3.1:0.1
sl '' kj, Q rn
0 Suitable for Output Stage of 5 Watts Car Radio and Car Stereo. iyi?fy L. sk tl I
0 Good Linearity of hFE. I g '-
0 Complementary to 2SA1359. M1
1.9MAX. g
MAXIMUM RATINGS (Tc = 25°C) 0.75:0.15 ii,
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 40 V -?s1A2:1, 23:04
Collector-Emi) Voltage VCEO 40 V 1 2 3 _'e. 1f
_. ' _ E
Emitter-Base Voltage VEBO V i',',-', w m p I-f-C)),.
Collector Current 10 3 A s,'s:.1 l. EMITTER
Ct 2. COLLECTOR
Base Current IB A 3. B ASE
T =2 © 1.
g?11?c::1: Power a 5 C PC 5 W JEDE C -
1ss1 10n = 0
IT Te 25 C 10 JEIT A -
J unctlon Temperature Tj 150 C TOSHIB A 2-8H1A
Storage Temperature Range Tstg -55--150 C Weight : 0.82g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=40V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, 10:0 - - 100 nA
Collector-Emitter Breakdown
Voltage V(BR) CEO IC=10mA, IB=0 40 - - V
hFE (1)
V =2V, I =0.5A 80 - 240
DC Current Gain (Note) CE C
hFE (2) VCE=2V, IC--2.5A 25 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC=2A, IB=0.2A - - 0.8 V
Base-Emitter Voltage VBE VCE=2V, 10:0.5A - - 1.0 V
Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF
(Note) '. hFE(1) Classification o : 80--160, Y .' 120--240
1 2001-11-05
TOSHIBA
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
COLLECTOR POWER DISSIPATION
IC - VCE
COMMON EMITTER
Te = 25°C
0 0.8 1.6 2.4 3.2 4.0 4.8 5.6
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VBE
2.8 COMMON EMITTER
2.4 VCE=2V
Tc=100°C
00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE-EMITTER VOLTAGE VBE (V)
PC - Ta
co Ta=Tc INFINITE HEAT SINK
(2) NO HEAT SINK
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
COLLECTOR-EMITTER SATURATION
DC CURRENT GAIN hm
VOLTAGE VCE(sat) (V)
10 (A)
COLLECTOR CURRENT
2SC3422
hFE - 10
COMMON EMITTER
VCE =2V
Te = 1 00°C
0.03 0.1 0.3 1 3
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON EMITTER
IC /IB = 10
Tc = 100°C
0.03 0.1 0.3 1 3
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
I f I T T I I
10 MAX. (PULSED) X
I I I "ts Imsy.4
IC MAX. , 's.
(CONTINUOUS) sN
's 10msik.
N '500msX
D.C OPERATION ''N
Tc=25°C \ \
N h hh
N h \ l
N ,) \
.y.C. SINGLE NONREPETITIVE N \1
PULSE Tc=25°C N l
CURVES MUST BE DERATED k
LINEARLY WITH INCREASE V
IN TEMPERATURE
VCE? MN'.
3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3422
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
