2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3421. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SC3421TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING2SC3422TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER U ..
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGapplications (computer, personal equipment, office equipment, measuring equipment, industrialroboti ..
2SC3423 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SK1332 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1334BYTL-E , Silicon N Channel MOS FET
2SK1334BYTL-E , Silicon N Channel MOS FET
2SK1335 , Silicon N-Channel MOS FET
2SK1335 , Silicon N-Channel MOS FET
2SK1336 , Silicon N-Channel MOS FET
2SC3421-2SC3421.
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
TOSHIBA 2SC3421
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3421
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Unit in mm
8.3MAX.
5.8 ¢3.1:0.1
0 Complementary to 2SA1358 tl T' l m
f 3;?” rn' 2 _-lj]'
0 Suitable for Driver of 60 to 80 Watts Audio Amplifier J L, ><' tl
o High Breakdown Voltage I _?. .-
o 1.0MAX. I
MAXIMUM RATINGS (Tc = 25 C) 1SMAX. _ E
CHARACTERISTIC SYMBOL RATING UNIT 0.75t0.15 ':ls''
Collector-Base Voltage VCBO 120 V L
Collector-Emitter Voltage VCEO 120 V 2310.1 23:01
Emitter-Base Voltage VEBO 5 V 1 2 3 *3 g
_u' w _
Collector Current 10 1 A i:'-,'. m p _-"-Eji,ii,.
Base Current IB 100 mA t,'s:.1 l. EMITTER
g?niactotx: Power Ta=25°C PC 1.5 W i field"""
1ss1pa 10n = ©
. Te 25 C 10 JEDE C -
Junction Temperature Tj 150 C JEIT A -
Storage Temperature Range Tstg -55--150 C TOSHIB A 2-8H1A
Weight : 0.82g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 120V, IE = 0 - - 100 nA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 100 nA
Collector-Emitter Breakdown
Voltage V (BR) CEO 1C - 10mA, 1B - 0 120 - - V
DC Current Gain hFE VCE =5V IC = 100mA 80 - 240
(Note) ,
Collector-Emitter Saturation
Vol tage VCE (sat) IC - 500mA, IB - 50mA - 0.30 1.0 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 500mA - 0.78 1.0 V
Transition Frequency fT VCE = 5V, IC = 100mA - 120 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = lMHz - 15 - pF
(Note) .' hFE Classification
O:80--
160, Y .' 120--240
TOSHIBA
IC - VCE
COMMON EMITTER
Te = 25''C
1000 16
COLLECTOR CURRENT 10 (mA)
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC /IB= 10
Tc = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
3 10 30 100 300 1000
COLLECTOR CURRENT IC (mA)
co, Tc=Ta INFINITE HEAT SINK
Ce) NO HEAT SINK
COLLECTOR POWER DISSIPATION
PC (W)
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
DC CURRENT GAIN hFE
COLLECTOR CURRENT 1C (mA)
COLLECTOR CURRENT 1C
2SC3421
hFE - IC
COMMON EMITTER
300 Te = 100°C VCE = 5V
3 10 30 100 300 1000
COLLECTOR CURRENT 10 (mA)
IC - VBE
COMMON EMITTER
VCE = 5V
400 Tc = 100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
SAF E OPERATING AREA
10 MAX. (PULSED) .)i(. l I I
IC MAX. l l ------- Imst
(CONTINUOUS) 't Nr, "v-tl/tff,'
1000 N h ---100msyf
OPERATION \
Tc=25°C l N
y.f SINGLE NONREPETITIVE
PULSE Tc=25°C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE VCEp Px,.
10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3421
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
