2SC3420 ,Silicon NPN Power Transistors TO-126 packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3420 ,Silicon NPN Power Transistors TO-126 packageAPPLICATIONS).75.8gi3.1 10.1hFE = 70 (Min.) (VCE = 2V, IC = 4A)Low Saturation Voltage: VCE (sat) = ..
2SC3421 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONSELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3421. ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS2SC3421TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SC3422 ,TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING2SC3422TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)AUDIO FREQUENCY POWER AMPLIFIER U ..
2SK1315 , Silicon N-Channel MOS FET
2SK1317 , Silicon N-Channel MOS FET
2SK1317 , Silicon N-Channel MOS FET
2SK1318 , Silicon N Channel MOS FET High Speed Power Switching
2SK1332 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniDV rain-to-Source ..
2SK1334BYTL-E , Silicon N Channel MOS FET
2SC3420
Silicon NPN Power Transistors TO-126 package
TOSHIBA 2SC3420
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3420
STOROBO FLASH APPLICATIONS Unit in mm
MEDIUM POWER AMPLIFIER APPLICATIONS 8.3MAX.
n1 C,.../c,' ¢3.1:0.1
0 High DC Current Gain : hFE=140--600 (VCE=2V, Ic=0.5A) sl 3&3?“ 2 [il,' I
hFE=70 (Min.) (VCE=2V, IC=4A) g C-''
0 Low Saturation Voltage I "1
'. VCE (sat) = 1.0V (Max.) (IC = 4A, IB = 0.1A) 1OMAX. .
1.9MAX. Le
0 High Collector Power Dissipation 01510.15 3
: PC = 10W (Tc = 25°C), PC = 1.5W (Ta = 25°C)
MAXIMUM RATINGS (Tc = 25°C) 2.3t0.1 2.3h0.1
1 2 3 o. X
CHARACTERISTIC SYMBOL RATING UNIT m t tist rairs ia - ,- Iris',
Collector-Base Voltage VCBO 50 V 3 - m
V 40 r)',?,. l. EMITTER
Collector-Emitter Voltage CES V 2. COLLECTOR
VCEO 20 3. BASE
Emitter-Base Voltage VEBO 8 V JEDEC -
DC I 5
Collector Current P 1 (N t 1) IC 8 A JEITA -
u se o e CP TOSHIBA 2-8H1A
Base Current 1B 1 A W . ht 0 82 (T )
1 : . .
Collector Power Ta = 25°C P 1.5 W e g g YP
Dissipation Te = 25°C C 10
Junction Temperature Tj 150 "C
Storage Temperature Range Tstg -55-150 °C
(Note 1) .' Pulse Test :Pulse Width=10ms (Max.)
Duty Cyc1e=30% (Max.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB =40V, IE =0 - - 100 nA
Emitter Cut-off Current IEBO VEB = 8V, 10 = 0 - - 100 nA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC = 10mA, IB = 0 20 - - V
hFE (1) - -
V =2V, I =0.5A 140 - 600
DC Current Gain (Note 2) CE C
hFE (2) VCE = 2V, IC = 4A 70 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC = 4A, IB = 0.1A - - 1.0 V
Base-Emitter Voltage VBE VCE = 2V, 10 = 4A - - 1.5 V
Transition Frequency fT VCE = 2V, 1C = 0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 40 - pF
(Note 2) : hFE(1) Classification Y .' 140--240, GR : 200--400, BL : 300-600
1 2001-11-05
TOSHIBA 2SC3420
IC - VCE IC - VBE
COMMON EMITTER COMMON EMITTER
35‘ Tc=25°C VCE=2V
0 1 2 3 4 5 6 g
COLLECTOR-EMITTER VOLTAGE VCE (V) 8
hFE - IC
1000 0
o 0.2 0.4 0.6 0.8 1.0 1.2 1.4
E 500 Tc=100T BASE-EMITTER VOLTAGE VBE (V)
s, 300 25
© SAFE OPERATING AREA
E .r.t. SINGLE NONREPETITIVE PULSE Te=25''C
ie 50 >.<>:
8 COMMON EMITTER DUTY CYCLE=30% (MAX.) Tc=25°C
VCE=2V -Ic MAX. (PULSED) .).O.f
0.01 0.03 0.1 0.3 1 3 10 '10 MAX. .
A - (CONTINUOUS) 10msy.(.
COLLECTOR CURRENT 10 (A) s 5 \
S? "N h
3 \ 100ms.Z.N \
E - DC OPERATION
a VCE(sat) - IC ie Tc=25oC "ss
'sc, COMMON EMITTER g \
< A F' 1 1 h
0:3 Ic/IB=40 o \ h
a 1 E \ N
g ii g N,
M ii 0.5 O 0.5
B > 0.3
E 0 3 CURVES MUST BE
o't g DERATED LINEARLY
O H .1
trd 0 WITH INCREASE IN
:d 0.05 TEMPERATURE
O VCEO MAX.
0 0.03 0.1
0.01 0.03 0.1 0.3 1 3 10 1 3 10 30 50
COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V)
2 2001-11-05
TOSHIBA 2SC3420
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-11-05
:
www.loq.com
.
