2SC3392 ,NPN Epitaxial Planar Silicon Transistors High-Speed Switching ApplicationsFeatures Package Dimensions · Adoption of FBET process.unit:mm · High breakdown voltage : V =(–)50V ..
2SC3395 ,PNP/NPN Epitaxial Planar Silicon TransistorsSANYO SEMICONDUCTOR CORP BEE D " 7937075 0007332 5 "28A1341, _ T-37-I328C3395 Q -r-3S -/ /PNP/NPN E ..
2SC3395 ,PNP/NPN Epitaxial Planar Silicon TransistorsFeatures. Builtin bias resistor iRe-47ki2. R2=47k§2).. SmaII-sized package (GP).i ): 2SA1341
2SC3396 ,SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING APPLICATIONSNo. 12842SAI 342/2503396SILICON PNP/NPN EPITAXIAL PLANAR TRANSISTOR. FOR SWITCHING APPLICATIONS(WIT ..
2SC3397 ,PNP /NPN EPITAXIAL PLANAR SILICON TRANSISTORS
2SC3398 ,PNP/ NPN EPITAXIAL PLANAR SILICON TRANSISTORSSANYO SEMICONDUCTOR25A1344,23C3398@2860Applications. Switching circuit, inverter circuit, interface ..
2SK1266 ,Silicon N-channel Power F-MOS FETFeatures I Package Dimensionsq Low ON resistance Rns (on) : R135 (on) 1:0.080 (typ.) Unit: mmq High ..
2SK1271 ,N CHANNEL MOS FIELD EFFECT POWER TRANSISTORapplications.
\Vw/
1.0t0.2
0.6 d: 0.1
5.45 5.45 ABSOLUTE MAXIMUM RATINGS
tttrt g te,', ..
2SK1272 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING\_,/
h, .
m m.- “mqw m ml" " Mm...“ a M A N mntrtn‘u " _ m» m: wr-g-STB-_-w-_-tti-a-t_-pt-Ve" ..
2SK1272-T ,N-channel MOS FET\_,/
h, .
m m.- “mqw m ml" " Mm...“ a M A N mntrtn‘u " _ m» m: wr-g-STB-_-w-_-tti-a-t_-pt-Ve" ..
2SK1273 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGDATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SKI 273
\\_/ _
N-CHANNEL MOS FET
FOR HIGH SPEED ..
2SK1273-T1 ,N-channel power MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER V SYMBOL
ZSK1273
TEST CONDITIONS
Drai ..
2SC3392
