2SC3376 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.APPLICATIONS.0 Excellent Switching Times (10:0.8A): tr-- 1.0ps (Max.), tf= 1.0ps (Max.)0 High Colle ..
2SC3377 , 2SC2673
2SC3377 , 2SC2673
2SC3382 ,Low-Noise AF Amp ApplicationsFeatures. Adoption of FEET process. AF amp. Low-noise use( J.. ZSA1391MA1391/2SC3382PNP/ NPN Epitax ..
2SC3383 ,NPN Epitaxial Planar Silicon Transistors AF Amp ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SC3390 , Silicon NPN Epitaxial
2SK1221 ,N-Channel Silicon Power MOS-FETgSK1221 FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
F-II SERIES
M
2SK1223 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1228 ,Small-signal deviceElectrical Characteristics (T = 25°C)aParameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK1228 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SK1248 , POWER MOSFET
2SK1254 , Silicon N-Channel MOS FET
2SC3376
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS.
TOSHIBA 2SC3376
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC3376
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING INDUSTRIAL APPLICATIONS
APPLICATIONS. Unit in mm
HIGH SPEED DC-DC CONVERTER APPLICATIONS. 15.9MAX. $532102
0 Excellent Switching Times (Ic=0.8A)
: tr=1.0ps (Max.), tf=1.0ps (Max.) . ' '
0 High Collector-Emitter Breakdown Voltage : VCE0=800V
3.3MAX
20.0 :03
MAXIMUM RATINGS (Ta=25°C) 20+03
20.5 10.5
CHARACTERISTIC SYMBOL RATING UNIT 10:31:35
Collector-Base Voltage VCBO 900 V 5.45102 5.45102
Collector-Emi) Voltage VCEO 800 V 3; $35 at '
Emitter-Base Voltage VEBO 7 V , g .. .. .,.,.,-'" 41:;
DC 10 3 '_‘ --2--34 r2:
Collector Current A
Pulse ICP 5
Base Current 1B 1 A 1. BASE
. . . 2. COLLECTOR (HEAT SINK)
fie"it5e,rc)Power Dissipation PC 60 W 3. EMITTER
Junction Temperature Tj 150 T JEDEC -
Storage Temperature Range Tstg -55--150 T EIAJ -
TOSHIBA 2-16C1A
ELECTRICAL CHARACTERISTICS (Ta =25°C) Weight .' 4.7g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=800V, IE=0 - - 100 PA
Emitter Cut-off Current IEBO VEB=7V, Ic=0 - - 1 mA
Collector-Base Breakdown - -
Voltage V(BR) CBO IC=1mA, IE=0 900 - - V
Collector-Emitter Breakdown - -
Voltage V(BR) CEO IC=10mA, IB=0 800 - - V
DC Current Gain hFE VCE=5A, IC=0.8A 10 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC=0.8A, IB=O.16A - - 0.6 V
Base-Emitter Saturation Voltage VBE (sat) IC=0.8A, IB=O.16A - - 1.2 V
Rise Time tr ee' VCC *éOOV - - 1.0
Blirl, IB2
Switching Time Storage Time tstg INgUT OUTPUT - - 4.0 #S
IBI =0.08A a
. I = -0.20A J,
Fall Time tf 1%” CYCLES 1% - - 1.0
1 2001-05-24
TOSHIBA
IC - VCE
MMON EMITTER
c=25°C
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB =5
COLLECTOR-EMITTER SATURATION
VOLTAGE chm) (V)
Tc = 100°C
0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT 10 (A)
IC - VBE
s, COMMON EMITTER
S? VCE =5V
O Tc=100°C
o 0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE VBE (V)
DC CURRENT GAIN hpE
BASE-EMITTER SATURATION
VOLTAGE VBEW” (V)
SWITCHING TIM E (/15)
2SC3376
hFE - IC
COMMON EMITTER
VCE =5V
0.03 0.1 0.3 1 3
COLLECTOR CURRENT 10 (A)
VBE (sat) - IC
Tc = - 55''C
COMMON EMITTER
IC/IB =5
0.03 0.1 0.3 l 3
COLLECTOR CURRENT 10 (A)
SWITCHING TIME - 1C
IC = 10131 = - 5132
PULSE WIDTH = 20ps
DUTY CYCLE s 1%
Te = 25°C
b.05 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
TOSHIBA 2SC3376
rth - tw PC - Te
m CURVES SHOLD BE APPLIED IN THERMAL
Fi) LIMITED AREA. E
5 (SINGLE NONREPETITIVE PULSE) -
b? co INFINITE HEAT SINK i? 60 N
EA (2) NO HEAT SINK \
it 100 2 N
AP F \
g: V < 40
E a E N
- t' 10 [ls,' N.
a pt "Ns.
- {:1 20
a 1 C)
< a. \
0.1 0 \
0.001 0.01 0.1 1 10 100 1000 0 40 80 120 160 200
PULSE WIDTH tw (s) CASE TEMPERATURE Te (°C)
SAFE OPERATING AREA
100,:st
MAX. (PULSED) y.f 10psiK
10 MAX.
(CONTINUOUS)
E DC OPERATION
E 0.3 To = 25°C
U lmsX
g 0.1 3msyf
S 10msy.k.
l 0.05 100rns2f
O 0.03
X SINGLE NONREPETITIVE
0.01 PULSE Tc=25°C
CURVES MUST BE DERATED
0.005 LINEARLY WITH INCREASE IN
TEMPERATURE.
10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-05-24
TOSHIBA 2SC3376
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
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