2SC3356-T1B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T1B-A , NPN Silicon RF Transistor
2SC3356-T2B ,For amplify low noise and high frequencyDATA SHEETDATA SHEETSILICON TRANSISTOR2SC3356MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITA ..
2SC3357 ,NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLDDATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2SC3357-T1 ,For amplify high frequency and low noise.DATA SHEETSILICON TRANSISTOR2SC3357NPN SILICON EPITAXIAL TRANSISTORPOWER MINI MOLDDESCRIPTIO ..
2SK1120 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.5 Ω (typ.) DS (ON)High forward t ..
2SK1122 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 ''Cl .
—----—m
_--nu—
Gate to Source Cutoff Voltage Vesmn ..
2SK1123 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta L'''ld 25 ''Cl
CHARACTERISTIC SYMBOL _'!s"/rto,'l'rirEi:s.rlriiii ..
2SK1123 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature' -55 to +1 ..
2SK1132 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 OC)
PARAMETER SYMBOL
-4-
Drain Cut-off Current IDSS
..
2SK1133 ,N-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGPACKAGE DIMENSIONS (Unit :
2.8K0.2
2.9i0.2
Marking
0.3
1.1 to 1.4
1.Source
2.Gat ..
2SC3356-T1B-2SC3356-T2B
