2SC3346 ,Silicon NPN Power Transistors TO-220C packageSILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mmHIGH CURRENT SWITCHING
2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SK1098M ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK1101 ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101. ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101-01MR , N-CHANNEL SILICON POWER MOS-FET
2SK1102 ,N-CHANNEL SILICON POWER MOS-FETFeatures
OHigh speed switching
q Low on-resistance
0N0 secondary breakdown
OLow driving p ..
2SK1102 ,N-CHANNEL SILICON POWER MOS-FET_SK1102-01MR
FUJI
POWER MOS-FET
N-CF ANNEL SILICON POWE
R MOS-FET
I
2SC3346
Silicon NPN Power Transistors TO-220C package
. _ 2863346
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
msmx ffats :02
FEATURES: j g ' _
. Low Collector Sat'uration Voltage t E
t VCE(sat)=004V (Max.) (at IC=6A) E,"
. High Speed Switching Time t tstg=l.0ps (Typ.) " ' I
. Complementary .to 2SA1329 ii I , h as'
MAXIMUM RATINGS (Ta=25°C) Lsmxkl! l I
CHARACTERISTIC SYMBOL RATING UNIT av6 M 7
Collector-Base Voltage VCBO . 80 ll 2.51 an 3
Collector-tutter Voltage Vch 80 V N 3 . t
Emitter-Base' Voltage VEBO 6. V 3 ==E?-'5-3-
Collector: Current .10 12 A . 'h'
Base Current In I 2 . A" : ESEEEGTOR (HEAT SINK)
co",t/Ltyig,1rt"".r Dissipation PC 40 W 5 EMITTER
(Tc---25 C)
_ o JEDEG T0-220AB
Junction Temperature Tj 150 C BIA7 B0-46 _
Storage Temperature Range Tstg -55--k50 oty TOSHIBA Z-lOAlA
. Mounting Kit No. AC75
ELECTRICAL CHARACTERISTICS (Ta=25°C) Height / 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 "
Emitter Cut-off Current IEBO VEB=6V, Ic=0 L - 10 11A
fi'tltj,t,','nr,-t,1ttfgr, - Mme mum Iryn0 so - . - v
DC Current Gain 123253 VCE=1V.» Ic=1A 70 - 240
hFE(2) VCE=1V, Ic=6A 40 - -
Saturation Collector-Emitter VCE(sat) Ic=6A, IB=0.3A ... 0.2 0.4 ll
Voltage Base-emitter VBE(sat) IC=6A, ,IB=o.3A - 0.9 1.2
Transition Frequency " VCE=5V, Ic=1A - 80 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 220 - pF
Turn-on Time ton 20/16 INPUT x_m. OUTPUT - 0.2 -
Itll -
Switching Time Storage Time tstg _Iaz IBS: F) - 1.0 - us
I Fall Time er 2,',1,iQi,''ilsyl,, Vcc=sov - 0.2 -
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COLLECTOR CURRENT 10 (A)
COLLECTOR-EMITTER V'OLTAGE TOE (V)
DC CURRENT GAIN hFE
Io - VCE VCE - 10
COMMON EMITTER
T c = 25'C
10 50 COMMON
mm'r'rm
e . " it) Tc=25'C
30 4'i'
Im--. 1015A
COLmCTOR-EMITTER VOLTAGE VCE (V)
O 2 l _ 6 B 10 " . o 2 l 6 8
. COLLECTOR-EMITTER VOLTAGE VCE (v) COLLECTOR CURRENT 10 (A)
VCE - IC VCE - IO
COMMON EMITTER
Te = 100T
'e'ste
common mgrrma _
T c = -sqt;
COLIJ‘JCTOR-EMITTER VOLTAGE VCE (V)
. o A 6 . 12 2 l 6 a 12
COLLECTOR CURRENT lo (A) COLLECTOR CURRENT It; (A)
hFE - Io VCE(aat) - IC
COMMON EHITTER a common EMITTER
" ' VCE=1V E 05 10/13: 20
Tc=100'C . SE, 03
-55 E C)
a rd atm 2
al 05 1 G 10 20 ' G a3 1
COLLECTOR CURRENT To (A) COLLECTOR CURRENT lg (A)
BASE—mn'm'n SATURATION
VOLTAGE VBECBEI) (V)
COLLECTOR POWER DISSIPATION PC (W)
al. us 1 s 10 20
oonym'ron CURRENT To (A)
PC - Ta
© To=Ta INFINTE HEAT SINK .
..-.4 © aooxsooxammae HEAT. sum
60F-e © 100x1ooxzmmge HEAT SINK
__4 co 50X50x2mmAe HEAT SINK
. © NO HEAT SINE
." CY.
© r.,) 'r... N,
. © I N _,
a',""-!''' Ns'
_ © "s,
IO, mc, "s.
G) "ss x
, ‘\Q ,
00 i0 80 120 160 200 mo
VBE(eat) - 10
COMMON EMITTER
I G/IB= 20
Te: .-tsst;
AMBIENT TEMPERATURE Ta cc)
COLLECTOR ‘cnmm'r 10 .(w)‘_:"
Io - vmp.
ooiitott EMITTER
VcE=E l V
0 ty GB 1.2 1.6 2.0
BASE-EMITTER VOLTAGE VBE Or)
" . . SAFE OPERATING AREA
M I .l l Illnll 5
P 10 MAX. (PULSED) 'y.t'.
:10 MAX,"
:(conn~
- uuous) _.q
irty C. X SINGLE NONREPETITIVE
- PULSE Tc=25'c N
als- canvas MUST BE DERATED
- LINEARLY WITH INCREASE k
IN TEMPERATURE N
a1 I. A
V0130 MAX-
1 s 10 so 1
t90LL1ilCrtm-glMTTTEtt VOLTAGE VGE (v)
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