2SC3345 ,Silicon NPN Power Transistors TO-220 packageFEATURES:. Low Collector Saturation VoitageN'i. VCE(sat)= =0, 4V(Max. ) (at Ic=6A) é. High Speed Sw ..
2SC3346 ,Silicon NPN Power Transistors TO-220C packageSILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mmHIGH CURRENT SWITCHING
2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SC3354 ,Small-signal deviceAbsolute Maximum Ratings T = 25°Ca+0.20Parameter Symbol Rating Unit0.45–0.10+0.200.45–0.10(2.5) (2 ..
2SC3355 , NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
2SK1098M ,N-channel MOS-FETFeatures > Outline Drawing----->
2SK1098M ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK1101 ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101. ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101-01MR , N-CHANNEL SILICON POWER MOS-FET
2SK1102 ,N-CHANNEL SILICON POWER MOS-FETFeatures
OHigh speed switching
q Low on-resistance
0N0 secondary breakdown
OLow driving p ..
2SC3345
Silicon NPN Power Transistors TO-220 package
TOSHIBA CMSCRE'l'lr/0PT()1 Si, oli1lci0'ri'i?50 DDEW'HJD 5 ll
-.-_ 9097250 TOSHIBA (DISCRETE/OPTO) 56? OWOQ - DT'BB-H
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) -. , 2803 345
Unit in mm
HIGH CURRENT SWITCHING APPLICATIONS. .
lusqu. Asts:etia
FEATURES: f ' lg "
. Low Collector Saturation Voitage ij" l E -
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t VCE(sat)=0.4V(Max.) (at Ic=6A) . 3
. High Speed Switching Time l tstg=1.0us(Typ.) . H
, . ' " .L E
. Complementary Co 2SA1328 a . .
_ _ . g i E
_ 5 - r g
MAXIMUM RATINGS (Ta=25°C) _ , 1-5W- ' ' :2 l
CHARACTERISTIC SYMBOL RATING UNIT J"
Collector-Baie Voltage VCBO 60' We ll 2-54 L 254 g
Collector-Emi- Voltage cho 50 ll g 'ls' , "
M 4.4.
Emitter-Base Voltage VEBO 6 v ~1-2-3-
Collector Current Ic 12 A 3
Base Current IB 2 A I. BASE
. . . 2. COLLECTOR (HEAT SINK)
Coliggiggéggwer Dissipation PC " w a EMITTER
o JEDEC T0-230AB
Junction Temperature T1 150 C lgrAd 50-45
Storage Temperature Range Tstg -55-150 oC TOSHIBA 2-10A1A
.. -. . Mounting Kit No. A075
ELECTRICAL CHARACTERISTICS (Ta=2s°c) Weight , 1.9g
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=6OV, IE=0 - . - LO ph
Emitter Cut-off Current IEBO V3386V, Ic=0 - - 10 11A
Collector-Emitter _ = - -
Breakdown Voltage V(BR)CEO Ic-SOmA, IB 0 50 V
hFE(l = = -
DC Current.fain (Noteg VCE Ill, IC IA 70 240
hFE(2) VcE=11ls Ic=6A 40 - -
Saturation Collector-emitter VCasat) Ic=6A, IB=0.3A - 0.25 0.4 ll
Voltage Base-emitter 11BE(sat) Ic=6A. IB=0.3A - 0.9 1.2
Transition Frequency fT VCE=5V, Ic=1A - 90 - MHz
Collector Output Capacitance Cob Vc3=10V, 1350, f=1MHz - 180 - pF
Turn-on iime ton 20pts INPUT I OUTPUT - 0.2 -
IBI - Cl
Switching" Time Storage Time tstg 1132 132 V7 - 1.0 - #s
. 1is1''-TBg='t16A . Vcc=30V
Fall Time tf DUTY cmLE§1% - 0.2 -
Note t hFE(1) Classification 0 I 70-140, .Y t 126440
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COLLECTOR CURRENT
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COLLECTOR CURRENT
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l p," — © sooxsooxzmm Ad HEAT SINK "rc MAX (PULSED X
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AMBIENT TEMPERATURE Ta ('c) IN TEMPERATURE J?
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