2SC3334 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND COLOR TV CHROMA OUTPUT APPLICATIONSAPPLICATIONS I 2slglf)clfe, I0 High Voltage : VCEQ=25OV0 Low Cre : 1.8pF (Max.) 0.75MAX.O Complemen ..
2SC3336 , Silicon NPN Power Transistors
2SC3345 ,Silicon NPN Power Transistors TO-220 packageFEATURES:. Low Collector Saturation VoitageN'i. VCE(sat)= =0, 4V(Max. ) (at Ic=6A) é. High Speed Sw ..
2SC3346 ,Silicon NPN Power Transistors TO-220C packageSILICON NPN EPITAXIAL TYPE (PCT PROCESS)Unit in mmHIGH CURRENT SWITCHING
2SC3352A ,Power TransistorFeatures , 3 57m“.0 High speed switching0 High collector-base voltage (cho)High Breakdown Voltage, ..
2SC3352A ,Power TransistorAbsolute Maximum Ratings (Tc=25°C) . 3 "ll“ 15max0'5m“__—._—.— '5Item Symbol Value Unit 5, E 7- h 0 ..
2SK1089 ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK1096MR ,N-CHANNEL SILICON POWER MOSFET12S_N1_09ti-M2t
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1098M ,N-channel MOS-FETFeatures > Outline Drawing----->
2SK1098M ,N-channel MOS-FETApplications---> Maximum Ratings and Characteristics > Equivalent Circuit-Absolute Maximum Ratings ..
2SK1101 ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SK1101. ,N-CHANNEL SILICON POWER MOS-FET213K1101-01MR
FUJI POWER MOS-FET
N-CHANNEL SILICON POWER MOS-FET
I
2SC3334
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND COLOR TV CHROMA OUTPUT APPLICATIONS
TOSHIBA
2SC3334
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
SC3334
HIGH VOLTAGE SWITCHING APPLICATIONS
Unit in mm
COLOR TV CHROMA OUTPUT APPLICATIONS 5.IMAX.
0 High Voltage : VCE0=250V g
0 Low Cre .' 1.8pF (Max.) 0.75MAX.
LOMAX. -
0 Complementary to 2SA1321 0.8MAX, if z
MAXIMUM RATINGS (Ta=25°C) mi 9
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 250 V g
Collector-Emi) Voltage VCEO 250 V trl s-):':', Q
Emitter-Base Voltage VEBO 5 V , if,
DC 10 50 l. EMITTER
Collector Current mA 2. COLLECTOR
Pulse ICP 100 3. BASE
Base Current IE 20 mA JEDEC T0-92MOD
Collector Power Dissipation PC 0.9 W JEITA -
J unction Temperature Tj 150 T TOSHIB A 2-5J1A
Storage Temperature Range Tstg -55--150 ''C Weight : 0.36g (Typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 200V, IE = 0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1.0 pzA
Collector-Emitter Breakdown
Voltage V (BR) CEO 1C - 1mA, IB - 0 250 - - V
DC Current Gain hFE VCE = 20V, 10 = 25mA 50 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC - 10mA, IB - 1mA - - 1.5 V
Base-Emitter Voltage VBE VCE = 20V, 10 = 25mA - 0.75 - V
Transition Frequency fT VCE = 10V, IC = 10mA 60 100 - MHz
Reverse Transfer Capacitance Cre VCB = 30V, IE = 0, f = 1MHz - - 1.8 pF
TOSHIBA 2SC3334
IC - VCE hFE - IC
COMMON EMITTER COMMON EMITTER
f 1.6 1.2 Ta=25''C 300 Ta=25°C
- 0.8 a
J.? 0 6 J?
E I E 100
E 0.4 g
pd 0.2 m 30
M 0.15 D
g 0.1 10
0 4 8 12 16 20 24 28 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 1C (mA)
hFE - IC VCE(sat) - IC
COMMON EMITTER 2 COMMON EMITTER
300 VCE=10V E 1 Ta=25°C
S B A 0.5
a 100 a if,
U [Iii 8 0.3
ii 50 iii?,
g 30 'ii??, Ic/IB=10
D gg 0.1
Ci) F-r-;
o SRS?
© 'fir 0.05
5 0.02
0.3 1 3 10 30 100 0.3 1 3 10 30 100
COLLECTOR CURRENT 10 (mA) COLLECTOR CURRENT IC (mA)
VCE(sat) - IC IC - VBE
a COMMON EMITTER COMMON EMITTER
g 1 IC/IB=5 f; VCE=10V
t! A v 40
t S 0.5
w g E"
g g 0.3 E 30
E" 23 Ta 100 C
S 1:: Q
“Eu Ta=100°C ttd 20
ttt < 0.1 so.,
E1 A D
FRS? [f]
E> 0.05 ,3 10
0.02 0
0.3 1 3 10 30 100 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V)
2 2001-11-05
TOSHIBA
Cob, Cre - VCB
f=1MHz
Ta=25°C
COLLECTOR OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
0 40 80 120 160 200 240 280
COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR POWER DISSIPATION
PC (W)
0 40 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
TRANSITION FREQUENCY fT (MHz)
CO LLECTOR CURRENT
2SC3334
COMMON EMITTER
Ta=25°C
0.3 1 3 10 3O
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
l l _ l Ill l l
lg MAX. (PULSED) X
100_, llllll N \lmsX::
:10 MAX. mm X N -
-(c0NTINUOUS) I ( , N \ \
50 , ,
\ 100ms .)k. /\ N
DC OPERATION k
Ta=25°C N,
X SINGLE
NONREPETITIVE VCEO
PULSE Ta=25°C MAX.
CURVES MUST BE
1 DERATED LINEARLY
WITH INCREASE IN
TEMPERATURE.
3 10 30 100 300
C0LLECT0RaMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3334
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
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