2SC3328 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC3328TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)POWER AMPLIFIER
2SC3328 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS I 5.1 MAX. ILow Saturation Voltage: VCE (sat)=0-5V (Max.) (1021A)- - v0.75MAX.0 High S ..
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2SC3328
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications
TOSHIBA 2SC3328
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3328
POWER AMPLIFIER APPLICATIONS Unit in mm
POWER SWITCHING APPLICATIONS 5.1 MAX.
0 Low Saturation Voltage tr'),.
.' VCE (sat)=0.5V (Max.) (1021A) 0.75MAX.
0 High Speed Switching Time : tstg=1.0,as (Typ.) 1.0MAX, 3 -
0 Complementary to 2SA1315
2.2MAX.
10 SMIN
1. EMITTER
2. COLLECTOR
3. BASE
JEDEC T0-92MOD
JEITA -
TOSHIBA 2-5J1A
Weight : 0.36g (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO V
Collector Current IC A
Base Current IB A
Collector Power Dissipation PC 900 mW
J unction Temperature Tj 150 "C
Storage Temperature Range Tstg -55--150 "C
1 2001-11-05
TOSHIBA 2SC3328
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 80V, IE = 0 - - 1.0 PA
Emitter Cut-off Current IEBO VEB = 5V, 10 = 0 - - 1.0 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO 1C - 10mA, IB - 0 80 - - V
hFE (1)
= 2 I = . A - 24
DC Current Gain (Note) VCE V, C 0 5 70 0
hFE (2) VCE = 2V, IC = 1.5A 40 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC - IA, IB - 0.05A - 0.15 0.5 V
Base-Emitter Saturation Voltage VBE (sat) IC = IA, IB = 0.05A - 0.9 1.2 V
Transition Frequency fT VCE = 2V, IC = 0.5A - 100 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = o, f = IMHz - 30 - pF
Turn-on Time ton 235's PUT Iq OUTIZZUT - 0.2 -
BI 'r, 1B2 3
Switching Time Storage Time tstg IB2 - 1.0 - ps
VCC = 30V
. 1131: -IB2=0.05A,
Fall Time tf DUTY CYCLES 1% - 0.2 -
(Note) .' hFE (1) Classification o : 70--140, Y .' 120--240
2 2001-11-05
TOSHIBA
2SC3328
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMI'I'I‘ER VOLTAGE
DC CURRENT GAIN hFE
IC - VCE
IB=5mA
COMMON EMITTER
Ta = 25°C
0 2 4 6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE - IC
COMMON EMITTER
Ta = 100°C
IB=5mA 10 15 20 30 40
0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT IC (A)
hFE - IC
COMMON EMITTER
300 VCE = 2V
Ta = 100°C
0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR-EMI'I'I‘ER VOLTAGE
VCE (saw (V)
COLLECTOR—EMITTER SATURATION
VOLTAGE
VCE - IC
COMMON EMITTER
Ta = 25°C
15 20 3O
0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT IC (A)
VCE - IC
COMMON EMITTER
Ta = - 55°C
IB=5mA
10 15 20 30 40 50
0 0.4 0.8 1.2 1.6 2.0 2.4
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
COMMON EMITTER
IC/IB =20
Ta = 100°C
. 0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT IC (A)
TOSHIBA
2SC3328
BASE-EMITTER SATURATION
VOLTAGE VBE(sat) (V)
1C (A)
COLLECTOR CURRENT
0.01 0.03 0.1
VBE (sat) - IC
COMMON EMITTER
IC / IB = 20
Ta = - 55°C
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
IC MAX. (PULSED) IT. W I l I ll
[ll lllll
I MAX. (CONTINUO R 1msy.4
/10msX
m. N N),
r 100msyd. E
, 15X "N A
X SINGLE NONREPETITIVE
PULSE Ta = 25°C N,
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
COLLECTOR POWER DISSIPATION
IC - VBE
COMMON EMITTER
1.6 VCE=2V
Ta-- 100°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.6
BASE-EMITTER VOLTAGE VBE (V)
0 40 80 120 160 200
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA 2SC3328
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
5 2001-11-05
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