2SC3326 ,Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching ApplicationsApplications Unit: mm High emitter-base voltage: V = 25 V (min) EBO High reverse h : Reverse ..
2SC3328 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications2SC3328TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)POWER AMPLIFIER
2SC3328 ,Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Power Switching ApplicationsAPPLICATIONS I 5.1 MAX. ILow Saturation Voltage: VCE (sat)=0-5V (Max.) (1021A)- - v0.75MAX.0 High S ..
2SC3330 ,PNP/NPN Epitaxial Planar Silicon TransistorsOrdering numbar:EN1599A'lt_ssshll 2SA1317/2SC3330PNP/ NPN Epitaxial Planar Silicon TransistorsAI? A ..
2SC3330 ,PNP/NPN Epitaxial Planar Silicon TransistorsOrdering numbar:EN1599A'lt_ssshll 2SA1317/2SC3330PNP/ NPN Epitaxial Planar Silicon TransistorsAI? A ..
2SC3331 ,AF Amp ApplicationsFeatures. Large current capacity and wide ASO.( " 28A1318 CAbsolute Haxi-ll Ratings at Tas25oty uni ..
2SK1065 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitGate to Drain Voltage VGDO - 20 VGate Current lo 10 mADra ..
2SK1066 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25"C unitDrain to Source Voltage VDSX 15 VGate to Drain Voltage VG ..
2SK1068 ,Impedance Conversion ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage Fhsi 40 VGate to Drain Voltage VG ..
2SK1069 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2749N-Channel Junction Silicon FET2SK1069Low-FrequencyGeneral-Purpose Amplifier A ..
2SK1070PICTL-E , Silicon N-Channel Junction FET
2SK1070PIDTL-E , Silicon N-Channel Junction FET
2SC3326
Transistor Silicon NPN Epitaxial Type (PCT process) For Muting and Switching Applications
2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3326 For Muting and Switching Applications High emitter-base voltage: VEBO = 25 V (min) High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200~1200 Small package
Maximum Ratings (Ta ��� � 25°C)
Marking Unit: mm
Weight: 0.012 g (typ.)
