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2SC3311APANASONICN/a15000avaiSmall-signal device


2SC3311A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3312 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3317 , SUPER HIGH SPEED SWITCHING TRANSISTORS
2SC3317. , SUPER HIGH SPEED SWITCHING TRANSISTORS
2SC3318 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE/HIGH SPEED SWITCHINGApplicationsSwitching regulatorsUltrasonic generatorsHigh frequency invertersJEDEC ..
2SC3320 ,TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE HIGH SPEED SWITCHINGFeatures TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE, HIGH SPEED SWITCHING q Emir. ESEZ4-y-7‘ ..
2SK1036 ,Silicon N-Channel Power F-MOSElectrical Characteristics (Tc = 25˚C)Parameter Condition Min Typ Max UnitSymbol=200V , V = 0Drain- ..
2SK1061 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications  Excellent switching times: t = 14 ns (typ.) on High forward transfer admittance ..
2SK1062 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications  Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: ..
2SK1065 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitGate to Drain Voltage VGDO - 20 VGate Current lo 10 mADra ..
2SK1066 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25"C unitDrain to Source Voltage VDSX 15 VGate to Drain Voltage VG ..
2SK1068 ,Impedance Conversion ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage Fhsi 40 VGate to Drain Voltage VG ..


2SC3311A

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