2SC3310 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent Switching Timest tr=1. Ous(Max. ), tf=1. 0msOfax. ) at Ic=4A. High 'Collector ..
2SC3311 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3311A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3312 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3317 , SUPER HIGH SPEED SWITCHING TRANSISTORS
2SC3317. , SUPER HIGH SPEED SWITCHING TRANSISTORS
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1034 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1035 ,SILICON N CHANNEL POWER F MOSFET
2SK1036 ,Silicon N-Channel Power F-MOSElectrical Characteristics (Tc = 25˚C)Parameter Condition Min Typ Max UnitSymbol=200V , V = 0Drain- ..
2SK1061 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching times: t = 14 ns (typ.) on High forward transfer admittance ..
2SK1062 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: ..
2SC3310
Silicon NPN Power Transistors TO-220Fa package
TOSHIBA EIyISCRiiyI'E/0pT01 Sl, DEDEIIJ'WESU unmbqa h T
r J“; =" /
- 9097250 TOSHIBA tD1SCfRETE/OPTO) 'S'ec 07693 D 1C Ir-ar "
?‘2 SC3 3 l SILICON NPN TRIPLE DIFFUSED TYPE i'
. . - . " I
INDUSTRIAL APPLICATIONS
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING . .
_ - Unlt 1n mm
APPLICATIONS.
HIGH SPEED DC-DC CONVERTER APPLICATION. 10 Asa:ea2
FEATURES: A 3 5; w =
. Excellent Switching Times . _ J S 3
.. t tr=1.0us(Max.), tf--'1.0sts(Max.) at Ic=4A 3 3
. High‘Collector Breakdown Voltage , VCEO=4OOV fl 1-!
". ' I .
.. . . Pk
MAXIMUM RATINGS (Ta=25°C) - 1.2 2 (
CHARACTERISTIC SYMBOL RATING UNIT +025 L f, l
Collector-Base.Voltage ir'aso 500 V
a54ia25
Co1leetor-Emitter Voltage VCEO 400 V ----.
Emitter-Base Voltage VEBO 7 v. g
Collector Current DC Ic '5 A
Pulse ICP 7
Base Current In 1 A L BASE
Collector Power Ta=25°C P 2.0 il Je. COLLECTOR
Dissipation o C a EMITTER
Tc=25 C 30 . - .
3" o JEDEC -
Junction Temperature Tj 150 EIAJ -
Storage Temperature Range Tstg -SS'~150 "c TosaiBA 2-10L1A
Height .. 2.1g
ELECTRICAL CHARACTERISTICS (Ta=25°C) .
CHARACTERISTIC SYMBOL TEST CONDITION ' MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=O - - 100 ph
Emitter Cut-off Current IEBO VEB=7V, Ic=0 . - - 1 mA
Collector-Base
Breakdown Voltage V(BR)CBO Ic lmA, IE 0 500 - - ll
Collector-Emitter - - - -
Breakdown Voltage V(BR)CEO ic=10mA, IB=0 hoo V
DC Current Cain hFE VCEESV’ IC=3A 12 - -
VCE=5V, IC=5A 8 - -
Collector-Emitter - _ - -
Saturation Voltage vCE(sat) 1075A, IB=IA 1.0 V
Base-Emitter
Saturation Voltage VBE(sat) 1c=5A, IBEIA ' - - 1.5 V
Rise Time tr mom, INPUT I31 OUTPUT - - 1.0
131 1::
Switching Time Storage Time tstg Wt Ba 3 - - 2.5 ps
Irsl---TBa=tuA .vom--eaxov
Fall Time tf DUTY GYCLE<1% - - 1.0
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