2SC3309 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent, Switching Timestr= I. osaiax. I, tf= l. O#s(Max. ) at Ic=0.8A. High Collector ..
2SC3310 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent Switching Timest tr=1. Ous(Max. ), tf=1. 0msOfax. ) at Ic=4A. High 'Collector ..
2SC3311 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3311A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3312 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3317 , SUPER HIGH SPEED SWITCHING TRANSISTORS
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1034 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1035 ,SILICON N CHANNEL POWER F MOSFET
2SK1036 ,Silicon N-Channel Power F-MOSElectrical Characteristics (Tc = 25˚C)Parameter Condition Min Typ Max UnitSymbol=200V , V = 0Drain- ..
2SK1061 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching times: t = 14 ns (typ.) on High forward transfer admittance ..
2SK1062 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: ..
2SC3309
Silicon NPN Power Transistors TO-220Fa package
TOSHIBA IIyISCRETE/0PT01 Sl, mi:rlmo'ri'iesio UUUTEEIU i, lil
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9097250 TOSHIBA tDISt2RETE/OPTO) 56C 07690 D 7rc..r3-ar-'""
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SILICON NPN TRIPLE DIFFUSED TYPE ‘47 . 2903 3092!,
.' INDUSTRIAL APPLICATIONS
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING .. . U
" . nit in mm
APPLICATIONS. . I - . ' :] _- . msmx.
HIGH SpEE0-00-00, CONVERTER APPLICATION. ': 7.0 giaPrhaa'
: " i J"'", Cl
FEATURES: .''' -Tg g 3
Excellent Swi tching Times' li J ' g' g
tr=1.0ssstNax.), tf=1.0us(Max.) at Ic=0.8A o . ti
_ . . , : ‘d I .
. High Collector Breakdown Voltage '. Vch=400V -. . . ' l 1.2 . I
- . ', V . I''; .
MAXIMUM RATINGS (Ta=25°c1 T . ". . l' I
CHARACTERISTIC "SYMBOL RATING UNIT [-,,,_,,,-s-ss.s,-/-ir
Collector-Bard vortliiie "_" . vdio 500 .. 'V ' . - “54:02:.
Collector-Emitter Voltage VCEO 400 V 235 I F
4 I ,5 .
Emitter-Base Voltage VEBO 7 ll 3 . " d
t u. 4-
_ Collector Currept ‘10 l A ---
Base Current" - IE 0.5 A I. BASE:
Collecior Power . Ta=25°C PC 2.0 ll : ::?:::EOR
Dissipation Tc=25°C 20
- ' JEDEC - -
Junction Temperature ' Td 150 "p Eu” _
Storage Temperature Range . Tstg .-55--150 °C~ TOSHIBA 't-10LIA
' . . F Weight I 2.1g
ELECTRICAL CHARACTERISTICS (Ta=25°C).
CfiARACTERISTIC SYMBOL 'TEST CONDITION MIN. TYP . MAX. UNIT
Collector Cut-off Current: ‘ICBO VCB=4OOV,' IE=;0 - - 100 ph
Emitter Cut-off Currént IEBO VEB=7V, IC=0 - - 1 mA
Co11eetor-Base = . = - -
Breakdown Voltage V(BR)CBO Ic lmA, IE 0 500 V
Collector-Emitter = - -
Breakdown Voltage V(BR)QEO IC Iht, IB~0 400 ll
DC Current Gain . hFE VCEasv’ Tty=0,1h 20 - -
' VCE=5V, Ic=1A 8 - -
CollectoréEmitter _ - = _ -
Saturation Voltage vCE(sat) ltr-s-IA, 18 02A - 1.0 V
Base-Ehdtter . - = F - - .
Saturation_ypltage VBE(sat) 1ty=1A, TB 0.2yt 1.5 ll
Rise Time . tr 20"" 1B1 OUTPUT - - 1.0
' IBl INPUT 2:: (1 .
Switching'Time Storagé Time tgfg mt" '152; fl,: - - 2.5.. as
_ . c.' If =zoov .
IBI =-IBz=008A 00 - -
Fall Time tf DUTY CYCLE<1%. 1.0
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA I1)ISCRETE/0PT0+
. .oc.sr5 2.: .'
9097250 TOSHIBA
23033995-f
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Sl, mi:0nrvr?iesiio 110075-11. ll fl
56C tTTts4-i"
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STATIC CHARACTERISTICS Ic - VOE (LOW VOLTAGE REGION)
n COMMON EMITTER '2 COMMON EMITTER 180
5 Tc=25'c v To=25'C
f? 180 J? 1. 120
L6 IBO. 8
a 820 = 60
It) . io
u o 0.8
g (18 20 _ g "
Ct af a (14 IE 10 mA
o O o O
0 GO vo o 2 l 5 a 10 12
COLLEGTOR-EMITTER VOLTAGE vos (v') _ COLLECTOR'EMITTER VOLTAGE VGE (V)
_ _ - 10 v _ I
GOO 2 CE 88.1: C
COMMON EMITTER 8 COMMON EMITTER
a VGE=5V E Io/IB=5
= 1 . EA
Ta =1oo G A p
H 60 A 05
g 25 a p
B d 03
H S e.
'd 10 5 H ill
O tt Ct
5 ra g 005
g o > C103
tl 05 001 (103 tll as 1 2 (1005 aol (105 u as 1 2
COLLECTOR CURRENT lg (A) COLLECTOR CURRENT Io (A)
VBE(aat) - IO to IC - VBE
g, G common EMITTER 5 (2,1i',l1fh/0"'"I"
:3 10/13-5 J? 1.6 E
tt,i g g L
a J.''
a 05 Q . n
an} a 8
I S,', o M
ID >4 *1
ttttr a o
u ao (103 111 t18 1 2 o (12 (14 :15 us 12 LI
COLLECTOR CURRENT I0 (A) BAfHg-RMIT'Ni1tt VOLTAGE VBE (v)
'TOBHIBA CORPORATION lmlllllllllllllllllllllllllllll||llllllIlllllIllllllIllHIIlImlllIII|||lHIIllllIllIHIIllIlll||ll|llIlllllllll|l|llllllllllllmIIlllII|Illl|lmlllllll|IIIllllllllIlllllllllllllllllllllullllllllmllllllllllllllll
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4H)ISCRETE/0PT01
St, . os:flnnn'7iesuo nnmma n [l
- 9097250 TOSHIBA (DISCRETE/OPTO)
soc 07592 " bt-as-as"
" " _ 2363309
SWITCHING CHARACTERISTICS .. rth _ tw
Ic/IB=10 g CURVES SHOULD BE APPLIED IN THERMAL
1B(1)=-1rs(a) g LIMITED AREA. .
PULSE WIDTH zaps tl (SINGLE NONREPETITIVE PULSE)
DUTY CYCLES " CI © INFINITE HEAT SINK
m Tc=zs'c tl, ©yo HEAT sum
s'..', 3 100
r; E t' 10
tll -a -
Io"' 10 1o 1 100 101 102 105
o 0.2 ttf tits 08 1.0
COLLECTOR CURRENT lo (A)
SAFE OPERATING AREA
5 Ic MAX.(PULSED) I
Ic MAX.
(oonrmuous)
500nm .
COLLECTOR CURRENT 16 (A)
. S INOLE NONREPETITIVE
PULSE Tc=25'C
a CURVES MUST BE DERATED
mummy wmu INCREASE
IN TEMPERATURE "v,
2 5 10 30 100 . GOO
GOLLECTOR-EMITTER VOLTAGE VCE (V)
PULSE WIDTH trw (sec)
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This Material Copyrighted By Its Respective Manufacturer
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