2SC3307 ,Silicon NPN Power Transistors TO-3PL packageAPPLICATIONS 20.5MAX. 33:02HIGH SPEED DC-DC CONVERTER
2SC3309 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent, Switching Timestr= I. osaiax. I, tf= l. O#s(Max. ) at Ic=0.8A. High Collector ..
2SC3310 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent Switching Timest tr=1. Ous(Max. ), tf=1. 0msOfax. ) at Ic=4A. High 'Collector ..
2SC3311 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3311A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SC3312 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1034 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1035 ,SILICON N CHANNEL POWER F MOSFET
2SK1036 ,Silicon N-Channel Power F-MOSElectrical Characteristics (Tc = 25˚C)Parameter Condition Min Typ Max UnitSymbol=200V , V = 0Drain- ..
2SK1061 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching times: t = 14 ns (typ.) on High forward transfer admittance ..
2SK1062 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: ..
2SC3307
Silicon NPN Power Transistors TO-3PL package
TOSHIBA 2SC3307
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
ZSC33®7
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS
SWITCHING REGULATOR APPLICATIONS
Unit in mm
20.5MAX. 3t0.2
HIGH SPEED DC-DC CONVERTER APPLICATIONS
cs/i''
26.0 1 0‘5
0 Excellent Switching Times
: tr = 1.0 ps (Max.), tf = 1.0 ps (Max.) (10 = 5A)
0 High Collector Breakdown Voltage : VCEO = 800V
20.01 0V6
I.0-th25
MAXIMUM RATINGS (Tc = 25°C) 1 2 3
5.45:0.15 5.45:0.15
CHARACTERISTIC SYMBOL RATING UNIT 33 §
Collector-Base Voltage VCBO 900 V tl _°§ S
Collector-Emi; Voltage VCEO 800 V 'Di=trrtCi)E
Emitter-Base Voltage VEBO 7 V
DC I 10 l. BASE
Collector Current C A 2. COLLECTOR (HEAT SINK)
Pulse ICP 15 3. EMITTER
Base Current IB 3 A JEDEC -
Collector Power Dissipation
(Tc = 25°C) PC 150 W JEITA -
Junction Temperature Tj 150 ''C TOSHIBA 2-21FIA
Storage Temperature Range Tstg -55--150 "C Weight 3 9.8 g (Typ.)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 800 V, IE = O - - 100 PA
Emitter Cut-off Current IEBO VEB = 7 V, 10 = 0 - - 1 mA
Collector-Base Breakdown - -
Voltage V (BR) CBO IC - 1 mA, IE - 0 900 - - V
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - 10 mA, IB - 0 800 - - V
. hFE (1) VCE = 5V, IC = 10mA 10 - -
DC Current Gain hFE (2) VCE = 5 V, IC = 5A 10 - -
Collector-Emi; Saturation
Voltage VCE (sat) IC - 5 A, IB - 1 A - - 1.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 5 A, IB - 1 A - - 1.5 V
Rise Time tr .J‘S 113,1 Ice IA - - 1.0
S it hi IBWPUTO - g gp)
'." c mg Storage Time tstg 132 IB2 v - - 3.0 [as
Time .
VCC =. 400 V
. 1B1 = -IB2 = -0.4A
Fall Time tf DUTY CYCLE s 1% - - 1.0
1 2001-11-05
TOSHIBA 2SC3307
IC - VCE hFE - IC
COMMON EMITTER 300 COMMON EMITTER
A Tc=25°C
s VCE = 5V
S? g 100
E iii 50 Tc=100°C
n: U 30
a Ci) 5
0 2 4 3 8 10 0.003 0.01 0.03 0.1 0.3 1 3 10
c0LLEcT0RaMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE(sat) - IC VBE(sat) - IC
COMMON EMITTER
IC/IB =5
COMMON EMITTER
IC/IB = 5
1 Tc = -55'C
Te = 100°C
VOLTAGE VBE (sat) (V)
BASE-EMITTER SATURATION
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
0.02 0.03
0.003 0.01 0.03 0.1 0.3 1 3 10 0.003 0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A)
IC - VBE SWITCHING TIME - IC
COMMON EMITTER IC = 10131
2 VCE = 5V IBI = -IB2
v 8 PULSE WIDTH = 20 (rs
S? a DUTY CYCLE s 1%
E 6 E .... Tc - 100 C
n: E - -
g Tc = 100°C © 25 tstg
o E t I
g 4 i5 100 ',
o ..- tf
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT 1C (A)
2 2001-11-05
TOSHIBA
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
C) INFINITE HEAT SINK
© NO HEAT SINK
(°C/W)
TRANSIENT THERMAL RESISTANCE
0.001 0.01 0.1 l 10 100 1000
PULSE WIDTH tw (s)
10 (A)
COLLECTOR CURRENT
2SC3307
SAFE OPERATING AREA
10 MAX. (PULSED) .)k. 10 Ms IT.
IC MAX.
5 CONTINUO
500 prs .)k.
3 ms X
0.5 10 msik.
30 ms yd.
100 ms X
1 >:< SINGLE DC
NONREPETITIVE
0.05 PULSE Tc = 25°C OPERATIO
0.03 CURVES MUST BE Tc = 25°C
DERATED LINEARLY V
WITH INCREASE IN CEO
1 TEMPERATURE. MAX.
10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SC3307
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
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