2SC3306 ,POWER TRANSISTORS(10A,400V,100W)APPLICATIONS.1.04.5Excellent Switching Times: tr=1.0,us (Maxi tf=i.b,us (Max.) (1025A)High Collecto ..
2SC3307 ,Silicon NPN Power Transistors TO-3PL packageAPPLICATIONS 20.5MAX. 33:02HIGH SPEED DC-DC CONVERTER
2SC3309 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent, Switching Timestr= I. osaiax. I, tf= l. O#s(Max. ) at Ic=0.8A. High Collector ..
2SC3310 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent Switching Timest tr=1. Ous(Max. ), tf=1. 0msOfax. ) at Ic=4A. High 'Collector ..
2SC3311 ,TransistorMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3311A ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-ba ..
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1034 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SK1035 ,SILICON N CHANNEL POWER F MOSFET
2SK1036 ,Silicon N-Channel Power F-MOSElectrical Characteristics (Tc = 25˚C)Parameter Condition Min Typ Max UnitSymbol=200V , V = 0Drain- ..
2SK1061 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching times: t = 14 ns (typ.) on High forward transfer admittance ..
2SK1062 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: ..
2SC3306
POWER TRANSISTORS(10A,400V,100W)
TOSHIBA 2SC3306
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SC3306
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING
Unit in mm
APPLICATIONS.
15.9MAX, 3-2101
HIGH SPEED DC-DC CONVERTER APPLICATIONS. q c! m.
0 Excellent Switching Times _ tr ' g;
: tr=1.0ps (Max.), tf=1.0ps (Max.) (Ic=5A) g g
0 High Collector Breakdown Voltage .' VCEO=4OOV C'.
MAXIMUM RATINGS (Ta = 25°C) 10103 'f','
CHARACTERISTIC SYMBOL RATING UNIT tod gi
Collector-Base Voltage VCBO 500 V 54::0‘2 545102
Collector-Emitter Voltage VCEO 400 V g 3311 tr? V
. 09 t " x
Emitter-Base Voltage VEBO 7 V -._t --__-;__ji ‘1;
Collector Current DC IC 10 A
Pulse ICP 15
Base Current IB 5 A 1. BASE
. . . 2. COLLECTOR (HEAT SINK)
Collector Power Dissipation P 100 W 3. EMITTER
(Tc=25°C) C EDEC
J unction Temperature Tj 150 "C J -
Storage Temperature Range Tstg -55--150 T EIAJ -
TOSHIBA 2-16ClA
Weight : 4.7g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=400V, IE=O - - 100 PA
Emitter Cut-off Current IEBO VEB=7V, IC--0 - - 1 mA
Collector-Base Breakdown - -
Voltage V (BR) CBO IC - 1mA, IE - 0 500 - - V
Co11eetor-Emitter Breakdown - -
Voltage V (BR) CEO IC - 10mA, IB - 0 400 - - V
DC Current Gain hFE Vc=5V, Ic=5A 10 - -
Collector-Emitter Saturation
Voltage VCE (sat) IC = 5A, IB =0.5A - - 1.5 V
Base-Emitter Saturation Voltage VBE (sat) Ic=5A, IB=O.5A - - 2.0 V
20 s VCC '=.200V
Rise Time tr 1131 - - 1.0
Switching Time Stora e Time t 1B2 Ipg - - 2 5 ,us
g stg INPUT - OUT- .
1B2 PUT
. IB1---IB2--0.5A - -
Fall Time tf DUTY CYCLES 1% 1.0
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
1997-09-01 1/3
TOSHIBA
2SC3306
IC - VCE
COMMON EMITTER
Tc = 25°C
COLLECTOR CURRENT 1C (A)
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
1C - VCE
COMMON EMITTER
Tc = - 55°C
COLLECTOR CURRENT 1C (A)
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC / IB = 5
To = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE (sat) (V)
0.02 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
DC CURRENT GAIN hm
BASE-EMITTER SATURATION
VOLTAGE VBE (sat)
IC - VCE
COMMON
EMITTER
Tc = 100°C
0 2 4 6 8 10 12 14
COLLECTOR-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE = 5V
Te = 1 00°C
0.02 0.1 0.3 1 3 10
COLLECTOR CURRENT 1C (A)
VBE (sat) - IC
COMMON EMITTER
IC / IB =5
Tc = - 55°C
0.02 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C
O The information contained herein is subject to change without notice.
RPORATION or others.
1997-09-01 2/3
TOSHIBA
2SC3306
10 (A)
COLLECTOR CURRENT
(°C/W)
TRANSIENT THERMAL RESISTANCE
IC - VBE
COMMON EMITTER
VCE = 5V
Te = 1 00'C
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
BASE-EMITTER VOLTAGE VBE (V)
rth - tw
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
CT) INFINITE HEAT SINK
CC) NO HEAT SINK
0.001 0.01 0.1 1 10 100 1000
PULSE WIDTH tw (S)
SWITCHING TIME (/15)
10 (A)
COLLECTOR CURRENT
SWITCHING CHARACTERISTICS
IC/IB=10
1 IBI-- -IB2
PULSE WIDTH=20
0.5 DUTY S1%
0 1 2 3 4 5 6 7
COLLECTOR CURRENT Ic (A)
SAFE OPERATING AREA
30 llllllll () lllll
10 MAX. (PULSRD) .yd. 10prs)i4 -
m IIHHI|\\ l Amp:
Ic MAX. \ N _ k A 'if''"'" I
6 (CONTINUOUS) , , , \ w '
3 Nil A \ J
X " A N
500pSX/ \
1 . " C " k \
1msik t \ _ _
3rns)k. N
0.5 10msi.k A \ Nr,. ,
0.3 100rnsg. \ N
.yd. SINGLE Asss)s,
NONREPETITIVE . K
0.1 PULSE Tc=25°C "DC ',ss'ils
CURVES MUST BE "0PERATIO - VCEO
0.05 DERATED LINEARLY - a MAX.
. WITH INCREASE IN .T0-25 C
0.OR TEMPERATURE. Illll l I lllll
2 10 30 100 300 1000
COLLECTOR-EMITTER VOLTAGE VCE (V)
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