2SC3299 ,Silicon NPN Power Transistors TO-220Fa packageAPPLICATIONS. Unit in mm.lt13MAX.. uuw uu;LcuLur oaLuracion Voltaget VcE(Sat)=0.4V(Max.) at Ic=3A. ..
2SC3300 , isc Silicon NPN Power Transistor
2SC3303 ,TO-251 Plastic-Encapsulate Biploar TransistorsApplications Unit: mmDC-DC Converter
2SC3306 ,POWER TRANSISTORS(10A,400V,100W)APPLICATIONS.1.04.5Excellent Switching Times: tr=1.0,us (Maxi tf=i.b,us (Max.) (1025A)High Collecto ..
2SC3307 ,Silicon NPN Power Transistors TO-3PL packageAPPLICATIONS 20.5MAX. 33:02HIGH SPEED DC-DC CONVERTER
2SC3309 ,Silicon NPN Power Transistors TO-220Fa packageFEATURES:. Excellent, Switching Timestr= I. osaiax. I, tf= l. O#s(Max. ) at Ic=0.8A. High Collector ..
2SK1012-01 ,N-CHANNEL SILICON POWER MOS-FET
2SK1016 ,POWER MOSFETFuji power MOSFET Specification
. Scope
This specifies Fuji power MOSFET 2 SKI 0 1 6
. Outli ..
2SK1016 ,POWER MOSFETFuji power MOSFET Specification
. Scope
This specifies Fuji power MOSFET 2 SKI 0 1 6
. Outli ..
2SK1018 ,POWER MOSFETFuji power MUSFET Specification
28K1018
1. Scope
I "2, This specifies Fuji power MOSFET 2 S ..
2SK1020 ,N-CHANNEL SILICON POWER MOSFETFeatures IOutline Drawings
. High speed switching
q Low on-resistance
0N0 secondary breakdow ..
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3299
Silicon NPN Power Transistors TO-220Fa package
TOSHIBA Il)ISCRC'l'E/()PT01 Sk, osi:lyuvri'ii!O 00mm? 3 [I
9097250 TOSHIBA (DISCRETE/OPTO) fityC 07677 DT-33~09
2 SC3 2 9 9 SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm .
_ IGSMAX.
FEATURES: 70 gfsa 1:02
. Low Collector Saturation Voltage . Il'---; D a I
I VcE(sat)=O.4V(Max.) at Ic=3A A )(‘J a gig 5
' High Speed Switching Time : tstg=l.0us(Typ.) i] S
. Complementary to 2SA1307 Id l +
. z. I
MAXIMUM RATINGS (Ta=25°c) 53. ’
CHARACTERISTIC SYMBOL RATING UNIT -
Collector-Base Voltage VcBO 60 ll .00 "
collector-Emi- Voltage Vch 50 V 3;". Q f
Emitter-Base Voltage VEBO 5 V 3 _ _ AN
Collector Current 1C 5 A
Base Current IB 1 A 1. BASE
o a COLLECTOR
Collector Power Ta=25 C P 2.0 w & BMITTWt
Dissipation Tc=25°C . C 20 .
o JEDEG -
Junction Temperature Th 15.0 C EIAJ -
Storage Temperature Range Tstg -55--150 oc TOSHIBA 2-10L1A
Weight , 2.1g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 1 "
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - P" 1 PA
Collector-Emi- - - -
Breakdown Voltage V(BR)CE0 Ity=10mA, IB 0 50 V
hFE(1) = _ _
DC Current Gain (Note) VCE IV, 1c=IA 70 240
hFE(2) vCE=1v, IC=3A 30 - - I
Saturation Co11eetor-Emitter VCE(sat) Ic=3A, IB=O.15A - 0.2 0.4 V '
Voltage iase-Emitter VBE(sat) IC=3A, IB=0.15A - 0.9 1.2
Transition Frequency fT VCE=4V,. Ic=1A - 120 - MHZ
Collector Output Capacitance Cob VCB=10V, IE=O, f=lMHz_ - 80 - pF
20p OUTPUT
Turn-on Time ton B INPUT [.31. - 0.1 -
1mm - ca
132 1132 f?,
Switching Time Storage Time tstg - 1.0 - us
IBl=-iBa=a15h . vcc=sov '
Fall Time tf DUTY tiLBgalrt, - o.1 -
Note t hpgu) Classification o I 70~140, Y t 120--MO t
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA INrSCRETliv0p'l'01 sc, DEDEEEEHESD DUU7E?B S I]
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9097250 TOSHIBA tihsiihirfis/orrfb,
"6c 7678 bt-A,
lo - VCE VCE - Io
A 10 comm mmmnm ' an L0 COMMON mu-rmn
Cl, Tc=250 , 2 Te---atst;
. . e.
o .'. A
H e 80 g a
9 vo _ 3 b a? 3
a 60 . EA
8% 6 60 53, tl
o ", g g
M l GO k'" 0
a o --O
A In=10m I td a
0 2 4 e B 1o 12 " 0 1 2 s A s 6 '7
i30LLMT0R-EMIT'N11ft VOLTAGE Irrng Or) COLLECTOR CURRENT Ic (A)
Iron - Io ch - I0
g COMMON mu'r'ma a 1.0 common EMITTER
“ Tc=1oo‘c 't Tc=-55'C
'g' a CB o
Ct Cy ID o
Sin " g 3 tC-, ttt J? J? /?
Fe; tCe, 00
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ks ' kt 04.
Fe EA".
ti a 0.2
COLLECTOR CURRENT Io (A) _..'" "-. - COLLECTOR CURRENT lo (A)
hFE - lg VCE(sat) - IC
1000 2 2
001114014 EMITTER 3 COMMON EMITTER
V =1V a L I I :20
:1 CE ti c/ B
A GOO a
Tc=100‘c .1; 0.5
tl " g 12 03
ttt 5-4 d
g 50 n J' Gl
o" ooz U
003 tll 03 1 G 1o 00:! al 03 1 G 10
COLLECTOR comm 10 (A) COLLECTOR CURRENT 10 (A)
|lllmllllllllllllllllllll|IIIIIIIHIIIIHIIIIHIIIIHllllllllIlllllllllllllllllllllllllllllllllllllllllllllllllIIIIIIIllllllllllllIllIlllIIIII|lllllllllllllllllllllllIllIIIIIlllllllllllIlllllIHIIIIIHIIIHIIIIllllllll TOSHIBA CDFI FDRATIDN
This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4H)ISCRETlr/0p'l'0+ Sl, IyElilnivri'iesin DDU?I='?‘1 ?'U
9097250 TOSHIBA (DISCRETE/OPTO) 56C 07679 ‘""b’T~33~04”
VBE(3at) - 10 IC _ VBE
COMMON EMITTER
5 I o? I5: 20
COMMON EMITTER
t VGE=1V
COLLECTER CURRENT Ic (A)
BASE—EMITTER SATURATION
VOLTAGE vmxsat) (v)
tytys (11 us 1 G 10 1.6
COLLECTOR CURRENT 10 (A) BASE-EMITTER VOLTAGE VBE (V)
SAFE OPARAT ING AREA
10 _ I
To MAX. (PULSED) .yg.
l l l h
Io MAX. ,
( CONTINUOUS
10 (A)
It SINGLE N0NREPETITIVE\‘
Q3 PULSE To = 25'C .
CURVES MUST BE DERATED "
LINEARLY WITH INCREASE N,
IN TEMPERATURE
1 G 10 GO la) 200
C0LLE0T0R-tilMITTER VOLTAGE VOE (V)
C OLLECTEH C URRENT
_ VCEO MAX.
TOSHIBA CDRPDHATIDN I[HIlllllllllllllllllllllllllInlllllllIllI|Il|IIlllllllllllllllllllllllllllllIIHllIlllll|I|l|l|lllllllIIIII|Illllllllll|HIlllllll||IHlllmlIlllllllllllllllllllllmllllllllllllllllllllllllllllllllllllllllllllllnll
This Material Copyrighted By Its Respective Manufacturer
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