2SC3298 ,Silicon NPN Power Transistors TO-220Fa packageAPPLICATIONS. Unit in mmDRIVER STAGE AMPLIFIER
2SC3298 ,Silicon NPN Power Transistors TO-220Fa packageTOSHIBA (IyrScRETE/0PT0) HSE D " MT?iiHitl Mr781n 3 .TOSNTOSHIBA TRANSISTORSILICON NPN EPITAXIAL TY ..
2SC3299 ,Silicon NPN Power Transistors TO-220Fa packageAPPLICATIONS. Unit in mm.lt13MAX.. uuw uu;LcuLur oaLuracion Voltaget VcE(Sat)=0.4V(Max.) at Ic=3A. ..
2SC3300 , isc Silicon NPN Power Transistor
2SC3303 ,TO-251 Plastic-Encapsulate Biploar TransistorsApplications Unit: mmDC-DC Converter
2SC3306 ,POWER TRANSISTORS(10A,400V,100W)APPLICATIONS.1.04.5Excellent Switching Times: tr=1.0,us (Maxi tf=i.b,us (Max.) (1025A)High Collecto ..
2SK1012-01 ,N-CHANNEL SILICON POWER MOS-FET
2SK1016 ,POWER MOSFETFuji power MOSFET Specification
. Scope
This specifies Fuji power MOSFET 2 SKI 0 1 6
. Outli ..
2SK1016 ,POWER MOSFETFuji power MOSFET Specification
. Scope
This specifies Fuji power MOSFET 2 SKI 0 1 6
. Outli ..
2SK1018 ,POWER MOSFETFuji power MUSFET Specification
28K1018
1. Scope
I "2, This specifies Fuji power MOSFET 2 S ..
2SK1020 ,N-CHANNEL SILICON POWER MOSFETFeatures IOutline Drawings
. High speed switching
q Low on-resistance
0N0 secondary breakdow ..
2SK1033 ,Silicon N-channel Power F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
2SC3298
Silicon NPN Power Transistors TO-220Fa package
TOSHIBA (IyiStiRirTE/0PTO)
T0SHlBATRANSlST0R
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
III 9097250 UUL'FBLCI 3 DTOSH
"T " {9001
Unit in mm
DRIVER STAGE AMPLIFIER APPLICATIONS. 1a3MAX,
7.0 32:02
FEATURES: l
d I -Tg g
. High Transition Frequency .' fT=100MHz (Typ.) J n 3
. Complementary to 2SA1306B it, g
MAXIMUM RATINGS 1.2 E
CHARACTERISTIC SYMBOL RATING UET :3
Collector-Base
Voltage 2SC3298B VCBO 200 ll ...vu-*t125
Collector-Emitter a
Voltage 2SC3298B VCEO 200 3 t
Emitter-Base Voltage VEBO 5 -Eiit-t
Collector Current Ic 1.5
L BASE
Base Current TB 0.15 a COLLECTOR
Collector Power Dissipation 3 ENITTER
P 20 W
(Tc=2§°C) C JEDEC -
Junction Temperature Tj 150 oC EIAJ -
Storage Temperature Range Tstg -55s150 oC TOSHIBA 2-10L1A
Height t 2.1g
ELECTRICAL CHARACTERISTICS (Ta=250C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=16OV, IE=0 - - 1.0 MA
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 1.0 #A
Collector-Emitter _ - -
Breakdown Voltage 2SC32988 V(BR)CE0 IC'lomA: IB'O 200 V
. hrs = = -
DC Current Gain (Note) ch 5V, 1C lOOmA 70 240
Co11ector-Emitter V I =500mA I --50mA - - l 5 V
Saturation Voltage CE(sat) C , B- .
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=10V, Ic=lOOmA - 100 - MHz
Collector Output Capacitance Cob VC5=10V. Ic=0, f=1MHz - 25 - pF
Note l hFE Classification
70-- 140, Y
.' 120--240
CURRENT
COLLECTOR
DC CURRENT GAIN
TRANSITION FREQUELCY
{T (MHz;
usE I) © ana7asn UDL?BED T EJTosu T-33-09
TOSHIBA (DISCRETE/OPTO)
Ic - VCE
COMMON
EMITTER
Tc =2 5'0
CCLLECT0R-KMITTER VOLTAGE VCE (v)
“FE - 10
COMMON EMITTEH
VCE=5 V
TCIIOOC
001 003 l
COLLECTOR CURRENT
fr- IC
COMMON EMITTER
VCE:10V
TCIZSL
30 100
COLLECTOR CURRENT
1c tA)
1C (IDA)
IC - VBE
_ COMMON
J? EMITTER
h vcg:5v
14 o 2 a4 us as 10 12 14
BASE-EMITTEH VOLTAGE VBE (v)
VCE(sat) - IC
m COMMON EMITTER
$3 L" IC/IB=10
§> J (430
I a 3 'S''
'reii;
3 man am 003 al a3 1 s
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
5 I ll tltr I l I
_ . .y.4 _
10 MAX (PULSED)‘>-< I Ima
3 1IIM‘IAIIH ll 1omsiisr -
y c X 4 " -
(CONTINUOUS) , I I 100?”
"d? 1 do
V os'',
o ‘3 \ k
H ex \ , ,
t; 4y,\ m.
m .A\ "t m
g (IG t', A g'"
E l l lk N g .
m Ff SINGLE NONREPETITIVE\ N m
g PULSE Tc=25t N N N,
5 al. CURVES MUST BE DERATED _ NN g 2
g 'LINEARLY WITH INCREASE h Il N I
1000 . h h u _
co IN TEMPERATURE S,
005 Q! -
- \ 8-
(102 Allllll J 1 A‘Illll tm
10 so 100 300
COLLECTOR-EMITTER VOLTAGE VCE (v)
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