2SC3279 ,Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier ApplicationsApplications Unit: mmMedium Power Amplifier
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2SC3279-M , NPN Silicon Epitaxial Transistors
2SC3280 , NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
2SC3280# , NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)
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2SK0665 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SK1006 ,N-CHANNEL SILICON POWER MOSFETApplications ' 3 Source
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2SK1006-01MR ,N-CHANNEL SILICON POWER MOSFETFeatures
FUJI POWER MOS-FET
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2SK1008-01 ,N-CHANNEL SILICON POWER MOSFETApplications
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2SK1012-01 ,N-CHANNEL SILICON POWER MOS-FET
2SK1016 ,POWER MOSFETFuji power MOSFET Specification
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2SC3279
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279 Strobe Flash Applications
Medium Power Amplifier Applications High DC current gain and excellent hFE linearity
: hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA)
Maximum Ratings (Ta ��� � 25°C)
VCES 30
Note 1: Pulse width � 10 ms (max), duty cycle � 30% (max)
Electrical Characteristics (Ta ��� � 25°C)
Note 2: hFE (1) classification L: 140~240, M: 200~330, N: 300~450, P: 420~600
Unit: mm
Weight: 0.21 g (typ.)
