2SC3269 ,1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINEAPPLICATIONSTThrh DC Current Gain and Wynnnnnt hum Tinnnritv5.1 MAX.--...,v vv-:hFE(1)=140~600 (VCE ..
2SC3271F , Chroma Amplifier Transistor
2SC3271F , Chroma Amplifier Transistor
2SC3271F , Chroma Amplifier Transistor
2SC3271F , Chroma Amplifier Transistor
2SC3277 ,NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymbo Cs ondition Rt ating UniCV ollector-to-Bas ..
2SJ76 , Silicon P Channel MOS FET
2SK0665 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
2SK1006 ,N-CHANNEL SILICON POWER MOSFETApplications ' 3 Source
OEwitching regulators 1
" PS "'-"(-oe--l-,-?Ae'-0?
. DC-DC converters JE ..
2SK1006-01MR ,N-CHANNEL SILICON POWER MOSFETFeatures
FUJI POWER MOS-FET
F-II S
ERIES
IOutline Drawings
" 10x05
OHigh speed swit ..
2SK1008-01 ,N-CHANNEL SILICON POWER MOSFETApplications
q Switching regulators
q JPS
o DC-DC converters
0 General purpose power amplif ..
2SK1012-01 ,N-CHANNEL SILICON POWER MOS-FET
2SC3269
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE
TOSHIBA
2SC3279
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC3279
STOROBO FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS
Unit in mm
5.1 MAX.
0 High DC Current Gain and Excellent hFE Linearity A
: hFE (1)=140--600 (VCE=1V, Ic=0.5A) g
'. hFE (2)=70 (Min.), 200 (Typ.) (VCEle, lc=2A) II 3'
0.45 ' W
0 Low Saturation Voltage 0.55MAX. I H [l, 'el d
'. VCE (sat)=0-5V (Max.) (1022A, IB=50mA) 0.45 l g E
MAXIMUM RATINGS (Ta=25°C) ] [ -
CHARACTERISTIC SYMBOL RATING UNIT
1.27 .
Collector-Base Voltage VCBO 30 V g / 1.27
Collector-Emitter Voltage VCES 30 V I 1 , I' il
VCEO 10 e -
Emitter-Base Voltage VEBO 6 V
DC IC 2 1 EMITTER
Collector Current mA _
Pulsed (Note 1) ICP 5 g Egls-IEECTOR
Base Current IB 2 mA .
Collector Power Dissipation PC 750 mW JEDEC TO-92
Junction Temperature Tj 150 T EIAJ SC-43
Storage Temperature Range Tstg -55-150 "C TOSHIBA 2-5F1B
W . ht : 0.21
Note 1 : Pulse Width=10ms (Max.), Duty Cycle=30% (Max.) elg g
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=3OV, IE=0 - - 0.1 ph
Emitter Cut-off Current IEBO VEB=6V, Ic=0 - - 0.1 PA
Collector-Emitter - -
Breakdown Voltage V (BR) CEO IC--10mA, IB=0 10 - - V
Emitter-Base Breakdown
Voltage V(BR)EBO IE=1mA, Ic=0 6 - - V
hFE (1) - - -
DC Current Gain (Note 2) VCE=IV, IC=0.5A 140 600
hFE (2) VCE = IV, IC = 2A 70 200 -
Collector-Emir Sturation
Voltage VCE (sat) Ic=2A, IB=50mA - 0.2 0.5 V
Base-Emitter Voltage VBE VCE=1V, 1022A - 0.86 1.5 V
Transition Frequency fT VCE=1V, IC=0.5A - 150 - MHz
Collector Output - - -
Capacitance Cob VCB= 10V, IE=0, f - 1MHz - 27 - pF
Note 2 : hFE(1) Classification
140--240, M : 200--330, N : 300--450, P : 420--600
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibilit
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TO HIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
of the buyer, when utilizing
TOSHIBA 2SC3279
IC - VCE IC - VBE
COMMON EMITTER COMMON EMITTER
a" Ta =25°C 2 VCE =1v
Ta=100°C 25 -25
U 0 1 2 3 4 5 6 7 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR-EMITTER VOLTAGE VCE (V) BASE-EMITTER VOLTAGE VBE (V)
hFE - IC VCE(sat) - IC
Ta=100°C g 0 COMMON EMITTER
PA I /I =40
E 25 gi? 0 3 C B
= -25 a .
ti M E
@ ts 0.1
td age:
D tttttl
0 OS 0
COMMON EMITTER go
VCE=1V 3 0.03
0.05 0.1 0.3 1 3 0
0.05 0.1 0.3 1 3
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
SAFE OPERATING AREA PC - Ta
: 10 MAX. (PULSED) .)io.(. IrnsM'. :
i 5 Illiil I llllllll , - i?
l I l i i I l i I I i l I I I , _
V 3-rc MAX.(CONTINUOUS) - 100nuW. N t!
J? 11 1 1 i ii N ti
F 10msyi. a
E 1 DC OPERATION m g
1;; (Ta=25°C) N M E
D 0.5 1 1 I I 1 I I 1 I N 3 v
U 0 3 X SINGLE NONREPETITIVE i E E
M . PULSE N. td
f? Ta=25°C N o
o .)K-yi(. PULSE WIDTHS10ms N t;
g 0.1 DUTY CYCLES30% N M
" . CURVES MUST BE _ d
o DERATED LINEARLY WITH :VCEO o
O .05 INCREASE IN - A D
TEMPERATURE -'f .X.'.
(h00'ii.03 0.1 0.3 1 3 IO 30 25 50 75 100 125 150
COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPRETURE Ta (°C)
961001EAA2'
O The information contained herein is presented only as a guide for the ap lications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights o the third games which may result from its use. No license is granted
by implication or otherwise under any intellectual property or other rights of TOSHIBA C RPORATION or others.
0 The information contained herein is subject to change without notice.
1997-11-27 2/2
www.ic-phoenix.com
.
