2SC3258 ,Silicon NPN Power Transistors TO-220 packageFEATURES'.. Low Collectbr Saturation Voltaget VCE(sat)=0.4V(Max.) at Ic=3A. High Speed Switching Ti ..
2SC3258 ,Silicon NPN Power Transistors TO-220 packageHIGH CURRENT SWITCHING
2SC3258. ,Silicon NPN Power Transistors TO-220 packageFEATURES'.. Low Collectbr Saturation Voltaget VCE(sat)=0.4V(Max.) at Ic=3A. High Speed Switching Ti ..
2SC3263 , Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
2SC3263 , Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
2SC3264 , Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
2SJ648 ,P-Channel enhancement MOS FET for load swFEATURES 2 1• 2.5 V drive available • Low on-state resistance +0.10.2–0 RDS(on)1 = 1.45 Ω MAX. ( ..
2SJ649 , MOS FIELD EFFECT TRANSISTOR
2SJ650 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsFeatures Package Dimensions•Low ON-resistance.unit : mm•Ultrahigh-speed switching.2063A•4V drive.[2 ..
2SJ652 ,High Output MOSFETsMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V --60 VD ..
2SC3258-2SC3258.
Silicon NPN Power Transistors TO-220 package
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
2863258 -
INDUSTRIAL APPLICATIONS
Unit in mm
FEATURES: 10:5me, ffats:ea2
. Low Collectpr Saturation Voltage 3 g . -
t vcztsae)=0.irvoiax.) at Ic=3A t, E
. High Speed Switching Time t tstg=1.0us(Typ.) . . g
. Complementary to 23A1293. E .
J", IO z.
MAXIMUM RATINGS (Ta=25°c) 'd..-. g
CHARACTERISTIC . SYMBOL RATING UNIT 1.6MAX L 2
Collector-Base Voltage VCBO 100 ------."
Collector-E‘mitter Voltage VCEO 80 2.54 254 g
Emitter-Base Voltage VEBO 7 g 'g l t
.-1 uh I: .
Collector Current DC IC A - - - -3-4
Pulse ICP 'll
Collector Power Dissipation P 30 w I. BASE
(Tc=25°c) C F a COLLECTOR(HEAT SINK)
o a EMITTER
Junction Temperature Td 150 C JEDEG TOi0AB
Storage Temperature Range Tstg -55-150 "c MAJ Sc-16
TOSHIBA 2-10AIA
ELECTRICAL CHARACTERISTICS (Ta=25°C) 32:33“? 'ISP'' hC75
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO vcB=100v, IE---0 ... - 1 PA
Emitter Cut-off Current IEBO VEB=7V, Ic=0 - - 1 Ph
Collector-Emitter - - -
Breakdown Voltage V(BR)CEO Ic=10raA, IB-o .80 ll
hFE(1)
ll =1V I =1A 70 - 240
DC Current Gain (Note) CE , C
hFE(2) ch=lv, Ic=3A 40 - -
Coueetor-
Saturation VCE(sat) - 0 . 2 o, 4
E t = KIT
Voltage mi ter Ic 3A, IB 0.15A V
Base-Emitter VBE(sat) - 0.9 1.2
Transition Frequency fT VCE=4V, Ic=lA - 120 - MHz
Collector Output Capacitance, Cob VCB=10V, IE=0, f=1MHz -. 80 - pF
. - Turn-on Time ton 'Wy INPUT IBI OUTPUT - 0.2 -
Tea Eii Cl
Switching Time Storage Time tstg 132 1132 3 - 1.0 - MS
TBrc=-tBa=tiA Vcc¢30v
Fall Time tf DUTY CYCLE$1% - 0.]. -
Note , hFE(l) Classification 0 I 70--140, Y I 120--240
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~___.....-....v-
I0 - VCE Q8 VCE C
12 5 90 so '70 60 COMMON M
v 50 EMITTER g
3 l Te - 25 c g a 6
G 30 :41,
tD M l
o 20 5 J'
a a 110
a o 0.2
a 1 “‘
g a COMMON EMITTER
o o o Te = 25'C
o 2 . l 6 a 10 12 " 0 1 2 5 l 5
f0LLEoTOR"M"'"R VOLTAGE VCE (v) COLLECTOR CURRENT lo (A)
v - I V _ I
08 CE C (16 CE C
common EMITTER
g 2 CD M
5. ( 2 Tc = 100 'C
.4 a6 S 0.6
m e'"',
[lit? E:
5: (14 a 0.4
a g ii 5
J; ts I >
B 02 g 0.2
:3 common EMITTER E
8 Terra-tSST) g
o 1 2 3 l 5 o 1 2 3 l ts
COLLECTOR CURRENT 1c (A) COLLECTOR CURRENT Ic (a)
hFE - IC VCE(sat) - lo
500 g G
GOO : COMMON EMITTER
M Ie=100t) tir, Ic/IB=20
a, ttt > 1
100 m 'r? as
'2 50 a w as
Ct :30 S 3
= , tll
= 10 g M
o v Ct uos
C9 COMMON EMITTER a g
p 5 A q
VCE= Ill 0 O
3 o > 002
(1003 MI t103 cu a3 1 3 aces c101 nos GI a3 1 3
COLLECTOR CURRENT Ic (A) COLLECTOR CURRENT [C (A)
TOSHIBA CORPORATION |llllfllllltlllllllllllllllllllllllllllllHllllIllllllllull||l|llllllIllflllllulllllllllllllllllllllHllllllHl|llllMll|lll|ll|lllllllllllllllllHlllllHllllllulllllllllllllllllllllnllll||llllllllllllllllllllllllll
l‘pg'v
2SC3258
M VBE(eat) - 10 IC - VBE
E ~COMMON EMITTER Ci COMMON EMITTER
g Id/IB=2° - V°E=1v
E: 3 E
< " . B
m 3 1 Tc=-550 a:
ti iii a
S> a g
a: 0.003 001 003 0.1 as 1 3 o 0.2 <14 0.6 as LO L2 1.4
COLLECTOR CURRENT lo (A) BASE-EMITTER VOLTAGE VBE (v)
rth _ tw SAFE OPERATING AREA
CURVES SHOULD BE APPLIED IN THERMAL
LIMITED AREA 10 Io MAX. (PULSED) Q
(SINGLE NONREPETITIVE PULSE
© INFINITE HEAT SINK
e? NO HEAT SINK
It; MAX.(CONTINUOUS)
TRANSIENT THERMAL RESISTANCE
rth ("C/W)
m SINGLE NONREPETITIVE
a PULSE Tc=25‘c
OI a1 1 10 100 1000
PULSE WIDTH cw (sec)
COLLECTOR CURRENT 10 (A)
CURVES MUST BE DERATED
(105 LINEARLY WITH INCREASE
IN IHilMPERATURE
0.5 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
lllllfllllllllllll|llllll|l|Hl|Illlllll|IllllllllllllllllllllllmlllIlllllllllllll|lllllllllllllll|lllllllllllllllllllllllllllllllllllllIIHlllIllllllllllllllllllllllullllll|llllllllllll|lllllIllllllllllllllllllllllll TOSHIBA CORPORATION
www.ic-phoenix.com
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