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2SC3255SANYON/a50avaiNPN Epitaxial Planar Silicon Transistors 60V/10A High-Speed Switching Applications


2SC3255 ,NPN Epitaxial Planar Silicon Transistors 60V/10A High-Speed Switching ApplicationsOrdering number:ENN1201DPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Spe ..
2SC3258 ,Silicon NPN Power Transistors TO-220 packageFEATURES'.. Low Collectbr Saturation Voltaget VCE(sat)=0.4V(Max.) at Ic=3A. High Speed Switching Ti ..
2SC3258 ,Silicon NPN Power Transistors TO-220 packageHIGH CURRENT SWITCHING
2SC3258. ,Silicon NPN Power Transistors TO-220 packageFEATURES'.. Low Collectbr Saturation Voltaget VCE(sat)=0.4V(Max.) at Ic=3A. High Speed Switching Ti ..
2SC3263 , Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
2SC3263 , Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
2SJ648 ,P-Channel enhancement MOS FET for load swFEATURES 2 1• 2.5 V drive available • Low on-state resistance +0.10.2–0 RDS(on)1 = 1.45 Ω MAX. ( ..
2SJ649 , MOS FIELD EFFECT TRANSISTOR
2SJ650 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsFeatures Package Dimensions•Low ON-resistance.unit : mm•Ultrahigh-speed switching.2063A•4V drive.[2 ..
2SJ652 ,High Output MOSFETsMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V --60 VD ..


2SC3255

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