2SC3233 ,Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter ApplicationsApplications High Speed DC-DC Converter
2SC3233 ,Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter ApplicationsApplications Excellent switching times: t = 1.0 µs (max) r t = 1.0 µs (max), (I = 0.8 A) f C ..
2SC3233 ,Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and Hig ..
2SC3242 , FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3242 , FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SC3242 , FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
2SJ624-T1B ,Pch enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SJ625 ,Pch enhancement type MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITZer ..
2SJ625-T1B ,Pch enhancement type MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR 2SJ625P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGD ..
2SJ625-T1B ,Pch enhancement type MOS FETFEATURES12• 1.8 V drive available• Low on-state resistance0.650.95 0.95RDS(on)1 = 113 mΩ MAX. (VGS ..
2SJ626 ,Pch enhancement type MOS FETFEATURES12• 4.0 V drive available• Low on-state resistance0.65 RDS(on)1 = 388 mΩ MAX. (VGS = –10 ..
2SJ634 ,DC/ DC CONVERTER TRANSISTOR
2SC3233
Transistor Silicon NPN Triple Diffused Type Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications
2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC3233 Switching Regulator and High Voltage Switching Applications
High Speed DC-DC Converter Applications Excellent switching times: tr = 1.0 µs (max)
tf = 1.0 µs (max), (IC = 0.8 A) High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C) Unit: mm
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)